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Efficient and Robust Oxide Switching

Descripción del proyecto

Estructuras en capa fina mejoradas podrían permitir memristores más fiables

La cantidad de información digital que se genera en todo el mundo crece vertiginosamente. Un impresionante 90 % de los datos que existían en el mundo en 2016 se habían generado tan solo durante los dos años anteriores. La tecnología de memoria no volátil es esencial para almacenar y gestionar de manera eficiente esta avalancha de datos, por las altas velocidades y el bajo consumo que ofrece. Los memristores, que son elementos de circuito fundamentales con dos terminales, tienen aplicaciones prometedoras en memorias no volátiles y computación neuromórfica. Sin embargo, a pesar de una década de intensos esfuerzos de investigación, la falta de un control preciso de las propiedades de las capas finas impide que sean uniformes y obstaculiza su fabricación a gran escala. El proyecto EROS, financiado con fondos europeos, pretende diseñar nuevas formas de obtener capas finas de óxidos nanoestructurados con un comportamiento mejorado de conmutación resistiva. Estas estructuras en capa fina mejoradas permitirán obtener memristores más fiables y cambiarán el paisaje tecnológico en inteligencia artificial y seguridad.

Objetivo

We are at the beginning of a Data Age. Data is exploding. In 2016, 90% of the world’s data ever created was in the two previous years. AI and data analytics are further increasing the growth. The power demand is huge and growing. Within a few years some developed countries will not have sufficient power to sustain the growth. The negative effects on the planet are serious. Non-volatile memory (NVM) technology (including memory and neuromorphic computing elements in a single device) could strongly help to solve the problem, giving two orders of magnitude power reduction and, by removing the data transfer bottleneck, increased speed. Oxide memristors have significant advantages over competing NVM technologies, particularly in terms of speed, cost and temperature stability. However, after more than a decade of intense effort, serious challenges remain in terms of scaling, uniformity and robustness. The challenges all relate to a lack of precise control of the materials. Completely new thinking in thin film materials engineering is needed.

EROS provides this new thinking by designing and engineering new forms of nanostructured oxide films to give highly Efficient, Robust Oxide Switching in an ultra-dense, ultra-low power, reliable oxide memristor system, with potential to change the technology landscape in AI, IoT, and security. ‘Ideal’ films will first be designed, fabricated, and understood. These will direct the way to simple industry-platform devices. Stochastic effects will be eliminated by creating films with separate vertical nanoscale ionic and electron channels with highly controlled vacancy and electronic concentrations, allowing scaling to a few nm, in a forming-free system. Also, multifunctional hybrid structures will be developed to give robustness. Furthermore, ferroelectricity will be induced, allowing simpler and smaller devices. Confidence in the proposed approach comes from proof-of-concept model systems shown by the PI.

Régimen de financiación

ERC-ADG - Advanced Grant

Institución de acogida

THE CHANCELLOR MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE
Aportación neta de la UEn
€ 1 913 521,00
Dirección
TRINITY LANE THE OLD SCHOOLS
CB2 1TN Cambridge
Reino Unido

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Región
East of England East Anglia Cambridgeshire CC
Tipo de actividad
Higher or Secondary Education Establishments
Enlaces
Coste total
€ 1 913 521,00

Beneficiarios (1)