Objective Six research teams from research institutes and industrial sites, leading and of newly developed SiGe materials in advanced devices. "Standard" in the field of low-temperature epitaxial Si and SiGe, will hire young fellows (post-docs) hr. in total 21 Men-Years. An active search for means low x and smooth layers, but with atomically sharp interfaces. Not interested people will be organised within the EU. They will be called in only the bandgap engineering possibilities of SiGe but also the research groups active in the development of SiGe materials and their structural possibilities of epitaxial growth and stacking of layers with application in advanced devices. Next, young researchers from the partners different Ge-and doping content and thickness offer possibilities for improving CMOS performance: improved threshold voltage control, reduced sites can visit the other partners' labs for shorter stays in order to get an overview over the different other technologies. S/D capacitance, lower power consumption, higher speed etc... Devices envisaged are a selective SiGe channel CMOS process avoiding S/D implant, Vertical MOSFET's (< 0.1 Fm gate length controlled by a layer thickness), Quantum Well SiGe CMOS on SIMOX wafers, poly SiGe gate CMOS. A first novel material is nanostructured Si1-xGex with high x, which structures itself into island while growing due to the excess strain; it forms the base for light emitting diodes. A second material is SiGeC, offering even wider band gap engineering possibilities, for use in high frequency MODFET's. One partner will develop relaxed, smooth SiGe substrates to be used for strained Si as well as SiGe epitaxy. A lot of exchange of wafers, analysis and measurements, and technology is planned, as well as joint theory development. Fields of science natural scienceschemical sciencesinorganic chemistrymetalloids Programme(s) FP4-TMR - Specific research and technological development programme in the field of the training and mobility of researchers, 1994-1998 Topic(s) 01 - NETWORKS Call for proposal Data not available Funding Scheme NET - Research network contracts Coordinator Interuniversitair Mikro-Electronika Centrum VZW EU contribution No data Address 75,Kapeldreef 3001 Heverlee Belgium See on map Total cost No data Participants (7) Sort alphabetically Sort by EU Contribution Expand all Collapse all Centre National d'Études des Télécommunications (CNET) France EU contribution No data Address 98 chemin du Vieux Chêne 38243 Meylan See on map Total cost No data Chalmers University of Technology AB Sweden EU contribution No data Address 3,Fysikgraend 412 96 Göteborg See on map Total cost No data DELFT UNIVERSITY OF TECHNOLOGY Netherlands EU contribution No data Address 17,Feldmannweg 17 2600 GA DELFT See on map Total cost No data Forschungszentrum Jülich GmbH Germany EU contribution No data Address Wilhelm-Johnen-Straße 52405 Jülich See on map Total cost No data Institute for Particle and Nuclear Physics - Hungarian Academy of Sciences Hungary EU contribution No data Address 1525 Budapest See on map Total cost No data MICROVACUUM LTD. Hungary EU contribution No data Address 10,Kerekgyarto U. 10 1147 BUDAPEST See on map Total cost No data NEDERLANDSE PHILIPS BEDRIJVEN BV Netherlands EU contribution No data Address 4,Professor Holstlaan 4 5656 AA EINDHOVEN See on map Total cost No data
