Objective
The project focuses on molecular-beam-epitaxy growth and on theoretical and experimental studies of strained semiconductor nanostructures based on GaSb/InAs and (Al,Ga)Sb/In(As,Sb) compounds. This little studied material system yields semiconductor heterostructures of great interest particularly because of their type-II nature. This property provides great freedom in the design of the energy-band diagram of these materials: from semimetals to semiconductors with about 1 eV energy gap; additionally it allows the creation of novel solid state micro- and nanostructures with real-space-separated two-dimensional electron and hole gases. Well-controlled strain in these structures provides further flexibility for the independent tuning of electron and hole states.
The main issues to be addressed will be: MBE growth of GaSb/InAs and (Al,Ga)Sb/In(As,Sb) quantum heterostructures (e.g. superlattices and quantum wells); fabrication of micro- and nanostructures with these materials; theoretical and experimental studies of electron and hole spectra; collective excitations in type-II heterojunctions; and transport and magnetotransport phenomena in wide temperature and magnetic-field ranges.
Topic(s)
Call for proposal
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56126 Pisa
Italy