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Nanoelectronics based on two-dimensional dichalcogenides

Objectif

Semiconductor industry rapidly approaches the performance limits of silicon-based CMOS technology. This proposal aims to pave the way
to electronic circuits based on two-dimensional transition metal dichalcogenides (TMDs), newly emerging semiconducting analogues of
graphene. TMDs can be rapidly exfoliated in the liquid phase into single layers starting from powders and provide solutions of 2D materials
that can be coated over large areas. The recently achieved transistors based on single-layer MoS2 indicate a mobility comparable or even
higher than silicon thin films or graphene nanoribbons, but with much lower leakage currents. In a joint effort of wet and gas phase
chemistry and deposition techniques, nanoanalytics, electronic and optical spectroscopy, electronic device fabrication and characterisation,
and theoretical modeling we aim to control the production and deposition of TMD nanolayers and nanoribbons, understand and control the
interplay between morphology, defects and electrical properties, understand electrical transport through semiconducting nanolayers, and
fabricate nanodevices. By combining the ease of processing commonly associated with organic electronics with superior electrical
properties, we will demonstrate a new type of low-power, low-cost field effect transistor based on a single TMD layer and/or nanoribbon.
The proposed outcomes of immediate interest for the three full partners from industry are (i) process flows and practices that enable
fabrication of nanoscale transistor arrays for application in flexible electronics via spraying and/or ink-jet printing, (ii) software packages for
modeling the electronic behavior of TMD nanolayers, and (iii) a prototype reactor for their large-scale growth and deposition. The training
and dissemination activities will be complemented by an associated partner who will produce educational videos together with the young
researchers of the consortium.

Appel à propositions

FP7-PEOPLE-2012-ITN
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Coordinateur

ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Contribution de l’UE
€ 552 957,34
Adresse
BATIMENT CE 3316 STATION 1
1015 Lausanne
Suisse

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Région
Schweiz/Suisse/Svizzera Région lémanique Vaud
Type d’activité
Higher or Secondary Education Establishments
Contact administratif
Andras Kis (Prof.)
Liens
Coût total
Aucune donnée

Participants (7)