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Graphene-based Devices and Circuits for RF Applications

Project description

Very advanced nanoelectronic components: design, engineering, technology and manufacturability Demonstration of the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies GRADE is a project focusing on advanced RTD activities necessary to demonstrate the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies. We propose two different concepts with specific advantages. These are Graphene field effect transistors (GFET), that use graphene as a high-mobility transistor channel and the alternative "graphene base transistors" (GBT), that are novel hot-electron devices that use graphene sandwiched between two insulating layers, each in turn covered by a metal layer. Considering the unique high frequency characteristics of the GFET and the GBT, the consortium envisions innovative applications in communication, automotive, security and environmental monitoring. Low power wireless communication systems operating above 100Gbit/s or handheld portable THz sensor systems for detection of dangerous agents seem feasible with active devices operating in the THz regime. To be affordable for a broad range of consumers, THz devices must be scalable and integrated with silicon technology. GBTs and GFETs can fulfil this requirement. This project enables the demonstration and assessment of these novel device concepts for future THz systems, and prepares their transition to semiconductor manufacturing. The GRADE consortium consists of four academic partners, of which two have a strong experimental background and excellent processing facilities and one is focused on physics-based modelling and simulation and one specialized in compact modelling and circuit design; one research institute, which provides a professionally run pilot production clean room, state of the art processing and an entry point for graphene into manufacturing; and one global semiconductor manufacturer willing to push their capabilities to enable the fabrication of integrated graphene RF circuits, including the integration on SiC and co-integration with pre-fabricated CMOS wafers.\\n

 

Field of science

  • /natural sciences/chemical sciences/inorganic chemistry/inorganic compounds
  • /natural sciences/physical sciences/electromagnetism and electronics/electrical conductivity/semiconductor
  • /engineering and technology/nanotechnology/nano-materials/two-dimensional nanostructures/graphene

Call for proposal

FP7-ICT-2011-8
See other projects for this call

Funding Scheme

CP - Collaborative project (generic)

Coordinator

UNIVERSITAET SIEGEN
Address
Adolf Reichwein Strasse 2A
57076 Siegen
Germany
Activity type
Higher or Secondary Education Establishments
EU contribution
€ 378 220
Administrative Contact
Sascha Fiedler (Mr.)

Participants (13)

INFINEON TECHNOLOGIES AG
Germany
EU contribution
€ 581 272
Address
Am Campeon 1-15
85579 Neubiberg
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Administrative Contact
Susann Alexa (Mrs.)
IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK
Germany
EU contribution
€ 717 292
Address
Im Technologiepark 25
15236 Frankfurt Oder
Activity type
Other
Administrative Contact
Uwe George (Mr.)
IMS bordeaux

Participation ended

France
EU contribution
€ 255 454
Address
351 Cours De La Liberation
33405 Talence
Activity type
Higher or Secondary Education Establishments
Administrative Contact
Stéphanie Clement (Ms.)
UNIVERSITE DES SCIENCES ET TECHNOLOGIES DE LILLE - LILLE I
France
EU contribution
€ 408 002
Address
Cite Scientifique Batiment A3
59655 Villeneuve D'ascq
Activity type
Higher or Secondary Education Establishments
Administrative Contact
Muriel VERNAY (Mrs.)
UNIVERSITE DE BORDEAUX
France
EU contribution
€ 0
Address
Place Pey Berland 35
33000 Bordeaux
Activity type
Higher or Secondary Education Establishments
Administrative Contact
Georges Hadziioannou (Prof.)
CONSORZIO NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA
Italy
EU contribution
€ 6 000
Address
Via Toffano 2
40125 Bologna
Activity type
Research Organisations
Administrative Contact
Baccarani Giorgio (Prof.)
KUNGLIGA TEKNISKA HOEGSKOLAN
Sweden
EU contribution
€ 392 000
Address
Brinellvagen 8
100 44 Stockholm
Activity type
Higher or Secondary Education Establishments
Administrative Contact
Simon Demir (Mr.)
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
France
EU contribution
€ 202 184
Address
Rue Michel -Ange 3
75794 Paris
Activity type
Research Organisations
Administrative Contact
Gilles Pulvermuller (Mr.)
INSTITUT POLYTECHNIQUE DE BORDEAUX
France
EU contribution
€ 0
Address
Av Du Docteur Albert Schweitzer 1
33402 Talence
Activity type
Higher or Secondary Education Establishments
Administrative Contact
Stephanie Clement (Mrs.)
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
France
EU contribution
€ 112 968
Address
Rue Michel Ange 3
75794 Paris
Activity type
Research Organisations
Administrative Contact
Stéphanie Clement (Mrs.)
UNIVERSITA DEGLI STUDI DI UDINE
Italy
EU contribution
€ 199 200
Address
Via Palladio 8
33100 Udine
Activity type
Higher or Secondary Education Establishments
Administrative Contact
Roberto RINALDO (Prof.)
ALMA MATER STUDIORUM - UNIVERSITA DI BOLOGNA
Italy
EU contribution
€ 199 200
Address
Via Zamboni 33
40126 Bologna
Activity type
Higher or Secondary Education Establishments
Administrative Contact
Claudio Fiegna (Prof.)
UNIVERSITA DI PISA
Italy
EU contribution
€ 199 200
Address
Lungarno Pacinotti 43/44
56126 Pisa
Activity type
Higher or Secondary Education Establishments
Administrative Contact
Giovanna Carcea (Dr.)