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Graphene-based Devices and Circuits for RF Applications

Graphene-based Devices and Circuits for RF Applications

Objective

Demonstration of the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies
GRADE is a project focusing on advanced RTD activities necessary to demonstrate the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies. We propose two different concepts with specific advantages. These are Graphene field effect transistors (GFET), that use graphene as a high-mobility transistor channel and the alternative "graphene base transistors" (GBT), that are novel hot-electron devices that use graphene sandwiched between two insulating layers, each in turn covered by a metal layer. Considering the unique high frequency characteristics of the GFET and the GBT, the consortium envisions innovative applications in communication, automotive, security and environmental monitoring. Low power wireless communication systems operating above 100Gbit/s or handheld portable THz sensor systems for detection of dangerous agents seem feasible with active devices operating in the THz regime. To be affordable for a broad range of consumers, THz devices must be scalable and integrated with silicon technology. GBTs and GFETs can fulfil this requirement. This project enables the demonstration and assessment of these novel device concepts for future THz systems, and prepares their transition to semiconductor manufacturing. The GRADE consortium consists of four academic partners, of which two have a strong experimental background and excellent processing facilities and one is focused on physics-based modelling and simulation and one specialized in compact modelling and circuit design; one research institute, which provides a professionally run pilot production clean room, state of the art processing and an entry point for graphene into manufacturing; and one global semiconductor manufacturer willing to push their capabilities to enable the fabrication of integrated graphene RF circuits, including the integration on SiC and co-integration with pre-fabricated CMOS wafers.\\n

 

Coordinator

UNIVERSITAET SIEGEN

Address

Adolf Reichwein Strasse 2a
57076 Siegen

Germany

Activity type

Higher or Secondary Education Establishments

EU Contribution

€ 378 220

Administrative Contact

Sascha Fiedler (Mr.)

Participants (13)

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INFINEON TECHNOLOGIES AG

Germany

EU Contribution

€ 581 272

IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK

Germany

EU Contribution

€ 717 292

IMS bordeaux

France

EU Contribution

€ 255 454

UNIVERSITE DES SCIENCES ET TECHNOLOGIES DE LILLE - LILLE I

France

EU Contribution

€ 408 002

UNIVERSITE DE BORDEAUX

France

CONSORZIO NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA

Italy

EU Contribution

€ 6 000

KUNGLIGA TEKNISKA HOEGSKOLAN

Sweden

EU Contribution

€ 392 000

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

France

EU Contribution

€ 202 184

INSTITUT POLYTECHNIQUE DE BORDEAUX

France

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS

France

EU Contribution

€ 112 968

UNIVERSITA DEGLI STUDI DI UDINE

Italy

EU Contribution

€ 199 200

ALMA MATER STUDIORUM - UNIVERSITA DI BOLOGNA

Italy

EU Contribution

€ 199 200

UNIVERSITA DI PISA

Italy

EU Contribution

€ 199 200

Project information

Grant agreement ID: 317839

Status

Closed project

  • Start date

    1 October 2012

  • End date

    31 March 2016

Funded under:

FP7-ICT

  • Overall budget:

    € 5 156 629

  • EU contribution

    € 3 650 992

Coordinated by:

UNIVERSITAET SIEGEN

Germany