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Single active dopant detection in semiconductor nanowires using electron holography

Single active dopant detection in semiconductor nanowires using electron holography

Objective

"The end of ""happy scaling"" in the semiconductor industry has lead to innovation being a key parameter in nanoelectronics. Doped nanowires of all types of sizes, shapes and composition are now used as components to build nano-electronic devices, light sources, detectors and for photovoltaic applications. As these devices are reduced in size, the location of individual dopant atoms becomes more important and the behavior of only one or two atoms can dominate their properties. More recently, research into devices that contain a single dopant atom has begun to gain momentum. At this time there is no method that can routinely measure the presence of the single dopant atoms that are inside these devices and our experience in the nanotechnology age has taught us that we cannot make what we cannot see. In 2011, several review papers in high-impact journals have highlighted the need for a technique that can see these atoms. Their detection is now within reach, using a technique known as off-axis electron holography."
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Principal Investigator

David Edward Cooper (Dr.)

Host institution

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Address

Rue Leblanc 25
75015 Paris 15

France

Activity type

Higher or Secondary Education Establishments

EU Contribution

€ 1 500 000

Principal Investigator

David Edward Cooper (Dr.)

Administrative Contact

Marie-Laure Page (Ms.)

Beneficiaries (1)

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COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

France

EU Contribution

€ 1 500 000

Project information

Grant agreement ID: 306535

Status

Closed project

  • Start date

    1 December 2012

  • End date

    31 July 2018

Funded under:

FP7-IDEAS-ERC

  • Overall budget:

    € 1 500 000

  • EU contribution

    € 1 500 000

Hosted by:

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

France