Skip to main content

Rare Earth Oxide Atomic Layer Deposition for Innovation in Electronics

Objective

The REALISE project aims (i) to develop an atomically controlled deposition process for high-k oxide layers as an enabling technology for a variety of innovative integrated circuit technologies and (ii) to advance fundamental knowledge of materials functionality in the areas of thin film growth, oxide-semiconductor interfaces, surface-precursor reactions and atomic-scale characterisation of dielectrics. These two global aims will be achieved by collaborative research across a range of disciplines.
No satisfactory process exists for depositing rare earth oxide films as high-k dielectrics at present. The process that is the subject of this project is atomic layer deposition (ALD), the leading technology for deposition of nanometre-scale films.

The project aims to overcome the current difficulties and limitations of rare earth oxide ALD, through project goals that span the entire process: design, synthesis, scale-up and testing of suitable precursors; characterisation of film quality and optimisation of deposition parameters. To investigate the functionality of rare earth oxides as dielectrics and to show the utility of ALD in the electronics industry, further goals of REALISE are: deposition onto variously-prepared semiconductor substrates (Si, Ge); high-resolution characterisation of the semiconductor-oxide interface; scale-up of new ALD process to industrially-sized Si wafers; testing of dielectric in capacitors for innovative memory (DRAM, NVM) and wireless (decoupling for RF) applications. REALISE thus brings together unique expertise to achieve urgently-needed materials integration solutions for the European semiconductor industry.

Call for proposal

FP6-2004-IST-NMP-2
See other projects for this call

Funding Scheme

STREP - Specific Targeted Research Project

Coordinator

UNIVERSITY COLLEGE CORK, NATIONAL UNIVERSITY OF IRELAND, CORK
Address
Lee Maltings
Cork
Ireland

Participants (11)

HELSINGIN YLIOPISTO
Finland
Address
Yliopistonkatu 4
P.O. Box 33 Helsingin Yliopisto
THE UNIVERSITY OF LIVERPOOL
United Kingdom
Address
Senate House, Abercromby Square
Liverpool
CONSIGLIO NAZIONALE DELLE RICERCHE
Italy
Address
Piazzale Aldo Moro 7
Roma
SAFC HITECH LIMITED
United Kingdom
Address
Power Road, Bromborough
Wirral
ASM MICROCHEMISTRY OY
Finland
Address
Hämeentie 135A, 3Rd Floor
Helsinki
STMICROELECTRONICS SRL
Italy
Address
Via C. Olivetti 2
Agrate Brianza
QIMONDA DRESDEN GMBH & CO. OHG
Germany
Address
Koenigsbruecker Strasse 180
10 09 64 Dresden
PHILIPS ELECTRONICS NEDERLAND B.V.
Netherlands
Address
Boschdijk 525
Postbus 90050 Eindhoven
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
France
Address
3, Rue Michel-ange
Paris
NXP SEMICONDUCTORS NEDERLAND B.V.
Netherlands
Address
High Tech Campus 60
Eindhoven
NUMONYX ITALY S.R.L.
Italy
Address
Via C. Olivetti 2
Agrate Brianza