Opis projektu FET Proactive: Atomic and Molecular Scale Devices and Systems Pokaż cel projektu Ukryj cel projektu SiAM aims at exploiting in future ICT devices and circuits the atomic nature of dopants used throughout microelectronics. The key idea is to use the very sharp, deep and reproducible potential created by a dopant in a semiconductor host crystal. Despite its small size (on the scale of the Bohr radius), the donor state of a single dopant can be addressed with conventional lithography techniques, and is therefore perfectly suitable for realistic devices exploiting the quantum nature of single atoms.The project relies on:- The extremely mature silicon technology in which, however, no quantum mechanical or atomic properties are at play when dopant atoms are used.- The very atomic nature of these dopants.The consortium will investigate dopants:- At the device level, with the demonstration of atomic devices (single dopant) and molecular devices (coupled dopants). A crucial effort towards integration of deterministic implantation in CMOS technology will be made.- In the theoretical understanding, for exploiting the specific features of dopant-based devices, especially time-dependent processes.- At the system level, with circuits exploiting the atomic characteristics of dopant based devices.The consortium brings together three methods for fabricating single-atom transistors: top-down silicon fabrication, bottom-up growth of nanowires and Scanning Tunneling Microscope (STM)-assisted fabrication. This is a unique combination of expertises only available in Europe. In addition, metrology and theory experts will exploit time-dependent phenomena in atomic devices for applications such as electron pumps.Another opportunity is to address directly the spin of a single dopant and make use of its extremely long coherence time to make a single atom quantum bit, crucial for applications in spintronics and quantum computation.Target outcomes:- Dopant-based devices: (i) atomically-precise dopant junctions realized with STM-assisted hydrogen resist lithography, (ii) single-atom transistors and pumps made in a silicon foundry and (iii) single atom spin quantum bit made in bottom-up silicon nanowires.- Time-dependent theory: the apparent limitation of non-adiabaticity will be turned into an advantage \tby exploiting the dynamical delays due to non-adiabaticity for robust single-gate operation.- Integration of the dopant-based CMOS devices in a circuit will be realized. STM-assisted lithography will be performed on silicon-on-insulator wafers with special surface preparation and capping, in order to avoid the usual surface preparation at very high temperature. Finally, the development of nanovias will pave the way for reintegration of STM defined donor device chips into a CMOS flowchart. Dziedzina nauki natural sciencesphysical scienceselectromagnetism and electronicsspintronicsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural sciencesphysical scienceselectromagnetism and electronicsmicroelectronicsnatural scienceschemical sciencesinorganic chemistrymetalloidsnatural sciencesphysical sciencesopticsmicroscopyscanning tunneling microscopy Program(-y) FP7-ICT - Specific Programme "Cooperation": Information and communication technologies Temat(-y) ICT-2013.9.7 - FET Proactive: Atomic and Molecular Scale Devices and Systems Zaproszenie do składania wniosków FP7-ICT-2013-10 Zobacz inne projekty w ramach tego zaproszenia System finansowania CP - Collaborative project (generic) Koordynator COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES Wkład UE € 804 618,00 Adres RUE LEBLANC 25 75015 PARIS 15 Francja Zobacz na mapie Region Ile-de-France Ile-de-France Paris Rodzaj działalności Research Organisations Kontakt administracyjny Jérôme PLANES (Dr.) Linki Kontakt z organizacją Opens in new window Strona internetowa Opens in new window Koszt całkowity Brak danych Uczestnicy (4) Sortuj alfabetycznie Sortuj według wkładu UE Rozwiń wszystko Zwiń wszystko IBM RESEARCH GMBH Szwajcaria Wkład UE € 388 210,00 Adres SAEUMERSTRASSE 4 8803 Rueschlikon Zobacz na mapie Region Schweiz/Suisse/Svizzera Zürich Zürich Rodzaj działalności Private for-profit entities (excluding Higher or Secondary Education Establishments) Kontakt administracyjny Catherine Trachsel (Mrs.) Linki Kontakt z organizacją Opens in new window Strona internetowa Opens in new window Koszt całkowity Brak danych PHYSIKALISCH-TECHNISCHE BUNDESANSTALT Niemcy Wkład UE € 247 372,00 Adres BUNDESALLEE 100 38116 Braunschweig Zobacz na mapie Region Niedersachsen Braunschweig Braunschweig, Kreisfreie Stadt Rodzaj działalności Research Organisations Kontakt administracyjny Stefan Hennig (Mr.) Linki Kontakt z organizacją Opens in new window Strona internetowa Opens in new window Koszt całkowity Brak danych LATVIJAS UNIVERSITATE Łotwa Wkład UE € 199 900,00 Adres RAINA BOULEVARD 19 1586 RIGA Zobacz na mapie Region Latvija Latvija Rīga Rodzaj działalności Higher or Secondary Education Establishments Kontakt administracyjny Vyacheslavs Kashcheyevs (Dr.) Linki Kontakt z organizacją Opens in new window Strona internetowa Opens in new window Koszt całkowity Brak danych UNIVERSITEIT TWENTE Niderlandy Wkład UE € 399 900,00 Adres DRIENERLOLAAN 5 7522 NB Enschede Zobacz na mapie Region Oost-Nederland Overijssel Twente Rodzaj działalności Higher or Secondary Education Establishments Kontakt administracyjny Benno Pals (Mr.) Linki Kontakt z organizacją Opens in new window Strona internetowa Opens in new window Koszt całkowity Brak danych