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Silicon Carbide Power Technology for Energy Eficient Devices

Silicon Carbide Power Technology for Energy Eficient Devices

Objective

"Highly efficient Power Electronics (PE) employed in power generation, transmission, and distribution is the prerequisite for the Europe-wide penetration of renewable energies; improves the energy efficiency; increases the power quality and enables continuous voltage regulation, reactive power compensation and automated distribution. It also facilitates the integration of distributed resources like local energy storages, photovoltaic generators, and plug-in electric vehicles.

The development of a new generation of high power semiconductor devices, able to operate above 10kV, is crucial for reducing the cost of PE in the above-mentioned applications. The material properties of SiC, clearly superior to those of Si, will lead to enhanced power devices with much better performance than conventional Si devices. However, today´s SiC PE performs rather poorly compared to the predictions and the production costs are by far too high.

Pooling world-leading manufacturers and researchers, SPEED aims at a breakthrough in SiC technology along the whole supply chain:

• Growth of SiC substrates and epitaxial-layers.
• Fabrication of power devices in the 1.7/>10kV range.
• Packaging and reliability testing.
• SiC-based highly efficient power conversion cells.
• Real-life applications and field-tests in close cooperation with two market-leading manu¬facturers of high-voltage (HV) devices.

Known and new methodologies will be adapted to SiC devices and optimized to make them a practical reality. The main targets are cost-savings and superior power quality using more efficient power converters that exploit the reduced power losses of SiC. To this end, suitable SiC substrates, epitaxial-layers, and HV devices shall be developed and eventually be implemented in two demonstrators:

• A cost-efficient solid-state transformer to support advanced grid smartness and power quality.
• A windmill power converter with improved capabilities for generating AC and DC power."
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Coordinator

INAEL ELECTRICAL SYSTEMS SA

Address

Calle Jarama 1 Poligono Industrial
45007 Toledo

Spain

Activity type

Private for-profit entities (excluding Higher or Secondary Education Establishments)

EU Contribution

€ 983 780

Administrative Contact

Fernando Ubieta (Mr.)

Participants (16)

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ABB SCHWEIZ AG

Switzerland

EU Contribution

€ 1 195 000

AGENCIA ESTATAL CONSEJO SUPERIOR DEINVESTIGACIONES CIENTIFICAS

Spain

EU Contribution

€ 1 285 840

E-DISTRIBUZIONE SPA

Italy

EU Contribution

€ 206 400

UNIVERSITAET BREMEN

Germany

EU Contribution

€ 888 780

UNIVERSIDAD DE OVIEDO

Spain

EU Contribution

€ 531 820,80

STMICROELECTRONICS SILICON CARBIDE AB

Sweden

EU Contribution

€ 771 976

ASCATRON AB

Sweden

EU Contribution

€ 996 300

THE UNIVERSITY OF NOTTINGHAM

United Kingdom

EU Contribution

€ 691 048

INFINEON TECHNOLOGIES AG

Germany

EU Contribution

€ 944 995

INFINEON TECHNOLOGIES AUSTRIA AG

Austria

EU Contribution

€ 909 704

TECHNISCHE UNIVERSITAET MUENCHEN

Germany

EU Contribution

€ 451 552

FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

Germany

EU Contribution

€ 794 959

CESKE VYSOKE UCENI TECHNICKE V PRAZE

Czechia

EU Contribution

€ 341 400

GOTTFRIED WILHELM LEIBNIZ UNIVERSITAET HANNOVER

Germany

EU Contribution

€ 489 579,20

ANNEALSYS SAS

France

EU Contribution

€ 346 647

INGETEAM POWER TECHNOLOGY SA

Spain

EU Contribution

€ 468 000

Project information

Grant agreement ID: 604057

Status

Closed project

  • Start date

    1 January 2014

  • End date

    31 December 2017

Funded under:

FP7-NMP

  • Overall budget:

    € 18 585 983,20

  • EU contribution

    € 12 297 781

Coordinated by:

INAEL ELECTRICAL SYSTEMS SA

Spain