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Compound Semiconductors for 3D integration

Compound Semiconductors for 3D integration

Objective

COMPOSE3 aims to develop 3D stacked circuits in the front end of line of Complementary Metal Oxide Semiconductor (CMOS) technology, based on high mobility channel materials. The final objective is a 3D stacked SRAM cell, designed with gates length taken from the 14nm technology node. This technology will provide a new paradigm shift in density scaling combined with a dramatic increase in the power efficiency of CMOS circuits. Our synergistic approach is based on the use of high mobility channel materials such as SiGe and InGaAs, utilized in fully depleted metal-oxide-semiconductor field effect transistor (MOSFET), for p and n channel MOSFETs respectively. The low processing temperatures (<600ºC) that can be used for high mobility channels are indeed advantageous for an intimate 3D stacking. COMPOSE3 also exploits the knowledge accumulated in Europe for the layer transfer of ultra-thin semiconductors. Wafer bonding and layer transfer is a critical process module that will be used to enable 3D stacking of high mobility channels. The overall objectives of COMPOSE3 will address the substrate, device and circuit issues. One objective will be to validate InGaAs layer transfer for implementation on 300mm wafers. Another objective will be to benchmark InGaAs nFETs with relevant contact dimensions against planar and non-planar Si based solutions at the 14nm node and beyond. The final objective will be to integrate, on 300mm wafers, monolithic 3D CMOS circuits with 14nm node gates based on n-type InGaAs devices on top of p-type (Si)Ge devices which are independently optimized. COMPOSE3 is extremely well aligned with the strategic agenda of the leading European IC manufacturer, and also exploits its innovation for the benefit of a European SME. It gathers the main European leaders in the advanced nanoelectronics R&D arena.

Programme(s)

FP7-ICT - Specific Programme "Cooperation": Information and communication technologies

Topic(s)

ICT-2013.3.1 - Nanoelectronics

Call for proposal

FP7-ICT-2013-11

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Funding Scheme

CP - Collaborative project (generic)

Coordinator

IBM RESEARCH GMBH

Address

Saeumerstrasse 4
8803 Rueschlikon

Switzerland

Activity type

Other

EU Contribution

€ 807 025

Website

Contact the organisation

Administrative Contact

Trachsel Catherine (Ms.)

Participants (9)

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DTF TECHNOLOGY GMBH

Germany

EU Contribution

€ 107 862

FUNDACION IMDEA MATERIALES

Spain

EU Contribution

€ 139 048

STMICROELECTRONICS CROLLES 2 SAS

France

EU Contribution

€ 140 966

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

France

EU Contribution

€ 655 437

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS

France

EU Contribution

€ 329 224

UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK

Ireland

EU Contribution

€ 482 626

UNIVERSITY OF GLASGOW

United Kingdom

EU Contribution

€ 446 968

INSTITUT POLYTECHNIQUE DE GRENOBLE

France

EU Contribution

€ 41 745

UNIVERSITE JOSEPH FOURIER GRENOBLE 1

France

EU Contribution

€ 44 402

Project information

Grant agreement ID: 619325

Status

Closed project

  • Start date

    1 November 2013

  • End date

    30 April 2017

Funded under:

FP7-ICT

  • Overall budget:

    € 4 712 343

  • EU contribution

    € 3 195 303

Coordinated by:

IBM RESEARCH GMBH

Switzerland

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Last update: 25 April 2017

Record number: 111144