Objetivo Improvements have been made in the performance of thin films on which solar cells are based. New n{+} and p{+} silicon carbide layers have been developed with low absorption in the visible range, wide optical gaps and high conductivities.The layers developed in the 2 consecutive decomposition and deposition chamber (TCDDC) system decrease optical losses and enhance the optical path. Such improvement lead to the enhancement of the open circuit voltage and of the short circuit current.The main advantage of the TCDDC system is that species incorporation and bombardment on the growing surface can be controlled, since the chemistry of the plasma can be spatially separated from that of the growing surface.In addition, transparent conductive oxide (TCO) layers have been improved in order to get a more stable, transparent and textured film with low sheet resistivities. This was achieved by producing indium tin oxide layers coated with a thin silicon monoxide layer which proved to be highly resistant against hydrogen bombardment.AS FAR AS AMORPHOUS SILICON SOLAR CELLS ARE CONCERNED, ONE OF THE MAJOR PROBLEMS TO BE OVERCAME DEALS WITH STABILITY PROBLEMS, WHICH AFFECT THE SHORT CIRCUIT CURRENT DENSITY, J SC, AND SO, OVERALL DEVICE PERFORMANCES. HOWEVER, V OC, IS LESS SENSITIVE TO DEGRADATION PROBLEMS. ON THE OTHER HAND IT SEEMS HARD TO IMPROVE J SC BEYOND THE VALUES ALREADY OBTAINED, WHICH MEANS THAT LITTLE CAN BE DONE IN ORDER TO IMPROVE FUTHER THE PERFORMANCES OF INTRINSIC LAYER (DOS, MU, TETA, ETC) USED ON PIN SOLAR CELL STRUCTURES. BUT, THE SAME CAN NOT BE SAID CONCERNING DOPED LAYERS. THUS, BASED ON OUR TCDDC SYSTEM, WHERE SPACE SEPARATION BETWEEN PLASMA CHEMISTRY AND THAT OF THE DEPOSITION IS ACHIEVED, WE COULD PRODUCE WIDE BAND GAP (WBG) LOW ABSORPTION IN THE VISIBLE RANGE, P- AND N- MICROCRISTALLINE MATERIALS (P+, N+), PRESENTING CONDUCTIVITIES, 10 TO THE POWER OF MINUS 2< SIGMA D < 10 TO THE POWER OF 2 (OHM CM) TO THE POWER OF MINUS 1 AND OPTICAL GAPS, E OP (OBTAINED FROM TAUC'S PLOT) IN THE RANGE OF 2.2 - 2.6 EV, WHILST BEING ALMOST NOT ACTIVED (RECORDED ACTIVATION ENERGIES, DELTA E, FROM DARK CONDUCTIVITY MEASUREMENTS, ALWAYS SHOWS SHOW VALUES BELOW 0.1 EV). THERE FOR COMPARISON REASONS WE SHOW THE CORRESPONDING RESULTS OBTAINED BY DIODE AND CPM METHOD. SUCH LAYERS WHEN USED EITHER AS A FRONT OR BACK CONTACT WILL REDUCE SIGNIFICANTLY ABSORPTION LOSSES AND WILL ENHANCE V OC BY IMPROVING THE BUILT-IN POTENTIAL. BASED ON SUCH LAYERS AND BY USING P+I'II'NN+ (I' MEANS A GRADED LAYER BASED ON A-SI:C:H THAT WORKS AGAINST IMPURITY INTERDIFFUSION BETWEEN AD-LAYER) STRUCTURES DEPOSITED IN SS SUBSTRATES IT WAS POSSIBLE TO PRODUCE SINGLE STRUCTURES PRESENTING OPEN CIRCUIT VOLTAGES HIGHER THAN 1.0 V. THESE RESULTS TOGETHER WITH WAYS DEVELOPED TO IMPROVE BLOCKING LAYERS WILL BE DISCUSSED. Ámbito científico natural scienceschemical sciencesinorganic chemistryinorganic compoundsnatural scienceschemical sciencesinorganic chemistrypost-transition metalsengineering and technologymaterials engineeringcoating and filmsnatural scienceschemical sciencesinorganic chemistrymetalloids Programa(s) FP1-ENNONUC 3C - Research and development programme (EEC) in the field of Non-Nuclear Energy, 1985-1988 Tema(s) Data not available Convocatoria de propuestas Data not available Régimen de financiación CSC - Cost-sharing contracts Coordinador UNIVERSIDADE NOVA DE LISBOA Aportación de la UE Sin datos Dirección CAMPUS DE CAMPOLIDE 1099 085 LISBOA Portugal Ver en el mapa Coste total Sin datos
