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Radiation Hard Resistive Random-Access Memory

Objective

The project aims to realize a strong methodology for the development and design of a radiation hard non-volatile memory technology by using standard CMOS silicon processing. Since standard silicon memories, such as flash memories tend to fail under irradiation, a new approach is envisaged: the development of a specific memory technology, so called resistive random-access memory (RRAM), which is able to sustain heavy ions and other charged particles. The switching effect of RRAM devices is caused by chemical Redox-reactions, therefore, radiation effects like total ionizing dose and single event effects don’t affect the switching mechanism.
Semiconductor memories, among rad hard integrated circuit scenario, are one of the most critical topics for space applications. Actually both volatile and nonvolatile memories, excluding few exceptions, are integrated using standard processes and standard architectures. This means that the final device is typically at least Rad tolerant and not Rad Hard and failure during mission is avoided using Error Correcting Code techniques including redundancy at the board level. The basic goal of the project is to give a methodology for the development of a new rad-hard nonvolatile RRAM memory with high-performance features like good retention, re-programmability and cycling, and realize a prototype (1Mbit RRAM memory) in order to validate the approach.

Coordinator

IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK
Net EU contribution
€ 400 312,50
Address
Im Technologiepark 25
15236 Frankfurt Oder
Germany

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Region
Brandenburg Brandenburg Oder-Spree
Activity type
Other
Non-EU contribution
€ 0,00

Participants (5)

CONSORZIO NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA
Italy
Net EU contribution
€ 2 000,00
Address
Via Toffano 2
40125 Bologna

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Region
Nord-Est Emilia-Romagna Bologna
Activity type
Research Organisations
Non-EU contribution
€ 0,00
Third-party

Legal entity other than a subcontractor which is affiliated or legally linked to a participant. The entity carries out work under the conditions laid down in the Grant Agreement, supplies goods or provides services for the action, but did not sign the Grant Agreement. A third party abides by the rules applicable to its related participant under the Grant Agreement with regard to eligibility of costs and control of expenditure.

UNIVERSITA DELLA CALABRIA
Italy
Net EU contribution
€ 94 000,00
Address
Via Pietro Bucci 7/11/b
87036 Arcavacata Di Rende

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Region
Sud Calabria Cosenza
Activity type
Higher or Secondary Education Establishments
Non-EU contribution
€ 0,00
Third-party

Legal entity other than a subcontractor which is affiliated or legally linked to a participant. The entity carries out work under the conditions laid down in the Grant Agreement, supplies goods or provides services for the action, but did not sign the Grant Agreement. A third party abides by the rules applicable to its related participant under the Grant Agreement with regard to eligibility of costs and control of expenditure.

UNIVERSITA DEGLI STUDI DI FERRARA
Italy
Net EU contribution
€ 99 000,00
Address
Via Ariosto 35
44121 Ferrara

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Region
Nord-Est Emilia-Romagna Ferrara
Activity type
Higher or Secondary Education Establishments
Non-EU contribution
€ 0,00
REDCAT DEVICES SRL
Italy
Net EU contribution
€ 349 850,00
Address
Via Spezia 20
20142 Milano

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SME

The organization defined itself as SME (small and medium-sized enterprise) at the time the Grant Agreement was signed.

Yes
Region
Nord-Ovest Lombardia Milano
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Non-EU contribution
€ 0,00
JYVASKYLAN YLIOPISTO
Finland
Net EU contribution
€ 94 200,00
Address
Seminaarinkatu 15
40100 Jyvaskyla

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Region
Manner-Suomi Länsi-Suomi Keski-Suomi
Activity type
Higher or Secondary Education Establishments
Non-EU contribution
€ 0,00