Wspólnotowy Serwis Informacyjny Badan i Rozwoju - CORDIS

H2020

PowerBase

Project ID: 662133
Źródło dofinansowania

Enhanced substrates and GaN pilot lines enabling compact power applications

Od 2015-05-01 do 2018-04-30, projekt zakończony | PowerBase Witryna

Dane projektu

Całkowity koszt:

EUR 87 613 740

Wkład UE:

EUR 19 196 548,95

Kraj koordynujący:

Austria

Zaproszenie do składania wniosków:

ECSEL-2014-2See other projects for this call

System finansowania:

ECSEL-IA - ECSEL Innovation Action

Cel

Deliverables

Deliverables not available

Publications

  • UIS Capability of Modern GaN Power Devices
    Author(s): J. Marek, M. Jagelka, A. Chvála, P. Príbytný, M.Donoval and D. Donoval
    Published in: 3rd international conference on advances in electronic and photonic technologies, 2016. 
  • CMOS Process-Compatible 200mm polycrystalline AlN Substrates for GaN Power Transistors
    Author(s): K. Geens, M. Van Hove, X. Li, M. Zhao, A. Šatka, A. Vincze and S. Decoutere
    Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017. 
  • MOCVD Growth and Characterizations of Unintentionally and Intentionally C doped GaN on 200 mm Si (111)
    Author(s): Ming Zhao, Juraj Priesol, Alexander Satka, Lukasz Janicki, Michal Baranowski, Jan Misiewicz, Robert Kudrawiec, Yoga Nrusimha Saripalli
    Published in: 18th International Conference on Metal Organic Vapor Phase Epitaxy, 2016. 
  • Possible reasons for dislocation formation in heavily doped Czochralski silicon
    Author(s): L. Stockmeier, L. Lehmann, C. Reimann, J. Friedrich
    Published in: The International Conference on Crystal Growth and Epitaxy -ICCGE-18, 2016. 
  • QDB: Validated Plasma Chemistries Database
    Author(s): Sara Rahimi, James Hamilton, Christian Hill, Jonathan Tennyson
    Published in: 69TH ANNUAL GASEOUS ELECTRONICS CONFERENCE – GEC, 2016. 
  • Application Related Reliability Test Concept for GaN HEMT Power Devices
    Author(s): M. Glavanovics, S. Ofner, R. Sleik, M. Nelhiebel, A. Madan, O. Haeberlen
    Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017. 
  • Linking reactor-scale plasma modelling with feature-scale profile
    Author(s): Sebastian Mohr, Anna Dzarasova, Dimitrios Tsamados, Vaibhav Deshpande, Mohamed Oulmane, Jonathan Tennyson
    Published in: Dry Process Symposium, 2015. 
  • Possible reasons for dislocation formation in heavily doped Czochralski silicon
    Author(s): J. Friedrich, L. Stockmeier, L. Lehmann, C. Reimann
    Published in: 10th International Conference of Polish Society for Crystal Growth - ICPSCG10, 2016. 
  • Study on the Dispersion Control of AlGaN/GaN Buffers Grown by MOCVD on 200 mm Si (111)
    Author(s): Ming Zhao, Steve Stoffels, Marleen Van Hove, Prem Kumar Kandaswamy, Hu Liang, Yoga Nrusimha Saripalli, Stefaan Decoutere
    Published in: 18th International Conference on Metal Organic Vapor Phase Epitaxy, 2016. 
  • QDB: A sustainable database for plasma chemistries” in International Workshop on Plasmas for Energy and Environmental Applications
    Author(s): Jonathan Tennyson, Christian Hill, Sara Rahimi
    Published in: International Workshop on Plasmas for Energy and Environmental Applications – IWPEEA2016, 2016. 
  • QDB: A new database of plasma chemistries and reactions – concept and exemplar verification
    Author(s): A. Dzarasova
    Published in: IOP Plasma physics conference, 2016. 
  • Next generation 200mm substrates for GaN power devices
    Author(s): S. Stoffels, K. Geens, M. Zhao, H. Liang, M. Van Hove and S. Decoutere
    Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017. 
  • Possible reasons for dislocation formation in heavily doped Czochralski silicon
    Author(s): L. Stockmeier, L. Lehmann, C. Reimann, J. Friedrich
    Published in: 1st German Czechoslovak Conference on Crystal Growth, 2016. 
  • Model of power InAlN/GaN HEMT for 3-D Electrothermal Simulations
    Author(s): Aleš Chvála, Juraj Marek, Patrik Príbytný, Alexander Šatka and Daniel Donoval
    Published in: International MOS-AK Workshop, 2016. 
  • A Novel System to Measure the Dynamic On-Resistance of On-Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions
    Author(s): A. Barbato, M. Barbato, M. Meneghini, M. Silvestri, T. Detzel, O. Haeberlen, G. Meneghesso, E. Zanoni
    Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017. 
  • Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method
    Author(s): J. Priesol, A. Šatka, A. Chvála, S. Stoffels, S. Decoutere
    Published in: Identification of critical regions in AlGaN/GaN-on-Si Schottky barrier diode using Electron beam induced current method, 2017. 
  • Determination of guard bands for quality characteristics using copula-based models for longitudinal data
    Author(s): Hofer V., Leitner J., Nowak T
    Published in: The Deutsche Arbeitsgemeinschaft Statistik (DAGStat) 2016, 2016. 
  • High temperature failure mode in power GaN devices
    Author(s): F. P. Pribahsnik, M. Nelhiebel, M. Mataln, M. Bernardoni, G. Prechtl, F. Altmann, D. Poppitz, A. Lindemann
    Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017. 
  • Guardbanding based on Device Drift Behavior
    Author(s): Vera Hofer, Karl-Franzens-University, Graz, Austria; Thomas Nowak
    Published in: Nineteenth Annual Automotive Electronics Reliability Workshop, 2017. 
  • Guardbanding Techniques for the Semiconductor Industry: A Comparative Study
    Author(s): Vera Hofer, Johannes Leitner, Horst Lewitschnig, Thomas Nowak
    Published in: The Joint Statistical Meeting – JSM2016, 2016. 
  • From Plasma Reactor to Surface Level: Linking Plasma with Feature Profile Simulations
    Author(s): Sebastian Mohr, Anna Dzarasova, Dimitrios Tsamados, Vaibhav Deshpande, Mohamed Oulmane, Jonathan Tennyson
    Published in: American Vacuum Society Symopsium, 2015. 
  • Evaluation of the capabilities of scanning acoustic microscopy towards assessing the porosity of Ag-sinter layers for GaN based power electronics
    Author(s): S. Brand, B. Boettge, J. Zijl, S. Kersjes, T. Behrens,
    Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017. 
  • Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs
    Author(s): M. Borga, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni
    Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017. 
  • Modern p-GaN power devices under UIS conditions
    Author(s): J. Marek, A. Šatka, M. Jagelka, A. Chvála, P. Príbytný, M. Donoval and D. Donoval
    Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017. 
  • Constructing self-consistent validated plasma chemistry
    Author(s): S. Rahimi, C. Hill, L. Tse, A. Vibhakar, S. Mohr, J.R. Hamilton, A. Dzarasova, D.B. Brown, J. Tennyson
    Published in: The 38th International Symposium on Dry Process (DPS2016), 2016. 
  • Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System
    Author(s): M. Ruzzarin, A. Barbato, M. Meneghini, I. Rossetto, M. Silvestri, O. Haeberlen, T. Detzel, G. Meneghesso, E. Zanoni
    Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017. 
  • Processes behind Suppressed Current Collapse Buffer Architectures
    Author(s): Ben Rackauskas, , Michael J Uren, Steve Stoffels and Martin Kuball,
    Published in: The International Workshop on Nitride Semiconductors 2016, 2016. 
  • Strain analysis and dicing defects of GaN on Si substrates
    Author(s): D. Poppitz, S. Brand, A. Graff, T. Detzel, O. Häberlen, G. Prechtl, F. Altmann
    Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017. 
  • Thermodynamics, kinetics, and electronic structure of H2 and F2 passivation of defect states in GaN: An ab-initio study
    Author(s): L. Lymperakis and J. Neugebauer
    Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017. 
  • 200 V Enhancement-mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI with Trench Isolation for Monolithic Integration
    Author(s): X. Li; M. Van Hove; M. Zhao; K. Geens; V. P. Lempinen; J. Sormunen; G. Groeseneken; S. Decoutere
    Published in: 41st Workshop on Compound Semiconductor Devices and Integrated Circuits Held in Europe, 2017. 
  • First time demonstration of fully isolated GaN power devices using SOI technology
    Author(s): Karen Geens
    Published in: imec magazine, 2017. 

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