Forschungs- & Entwicklungsinformationsdienst der Gemeinschaft - CORDIS

H2020

OSIRIS

Project ID: 662322
Gefördert unter

Optimal SIC substR ates for Integrated Microwave and Power CircuitS

Von 2015-05-01 bis 2018-11-30, Laufendes Projekt | OSIRIS Website

Projektdetails

Gesamtkosten:

EUR 4 487 117,50

EU-Beitrag:

EUR 1 819 212

Koordiniert in:

France

Aufruf zur Vorschlagseinreichung:

ECSEL-2014-1See other projects for this call

Finanzierungsprogramm:

ECSEL-RIA - ECSEL Research and Innovation Action

Ziel

Deliverables

Publications

  • Surface properties of AlInN/GaN heterostructures
    Author(s): A. Minj, D. Skuridina, D. Cavalcoli, A. Cros, P. Vogt, M. Kneissl, H. Ben Ammar and P. Ruterana
    Published in: E-MRS, issue Spring meeting, 2-6 May 2016 Lille France, 2016. 
  • Results on specific backside opening process dedicated to engineering package for SiC component
    Author(s): G. Bascoul, F. Infante
    Published in: Association d'analyse de défaillance Française (ANADEF), issue June 7-10 2016 Seignosse-Hossegor France, 2016. 
  • 2/3-D Device Simulations as an Effective Tool in Microelectronics Education
    Author(s): Aleš Chvála, Juraj Marek, Arpád Kósa, Patrik Príbytný, Ľubica Stuchlíková and Daniel Donoval
    Published in: Proceeding EWME, issue 11th European Workshop on Microelectronics Education 2016, Southampton, 11-13 May, 2016, 2016. 
  • Transfer of Knowledge from Scientific Research Projects towards Middle School Scholars
    Author(s): J. Kovác, jr, R. Szobolovský, A. Kósa, L. Stuchlíková and J. Kovác
    Published in: ICETA, 2015. 
  • Thermal Management of multifinger Power HEMTs Supported by 3-D Simulation
    Author(s): A. Chvála, J. Marek, P. Príbytný, J. Kováč, S. Delage, J.-C. Jacquet and D. Donoval
    Published in: Advances in Electrical and Electronic Engineering, issue Proceedings of the 4th international conference on Advances in Electronic and Photonic Technologies ADEPT, June 20 - 23, 2016, 2016. 

Koordinator

III-V LAB
France

EU-Beitrag: EUR 637 884


1 AVENUE AUGUSTIN FRESNEL CAMPUS POLYTECHNIQUE
91767 PALAISEAU CEDEX
France
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)

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Teilnehmer

INTRASPEC TECHNOLOGIES
France

EU-Beitrag: EUR 73 042


3 Avenue Didier Daurat
31400 Toulouse
France
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)

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UNITED MONOLITHIC SEMICONDUCTORS SAS
France

EU-Beitrag: EUR 46 591


AV DU QUEBEC BATIMENT CHARMILLE PARC SILIC DE VILLEBON COURTABOEUF 10
91140 VILLEBON SUR YVETTE
France
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)

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CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
France

EU-Beitrag: EUR 164 396


RUE MICHEL ANGE 3
75794 PARIS
France
Activity type: Research Organisations

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ISOSILICON AS
Norway

EU-Beitrag: EUR 153 500


ROGNELIA 30
4622 KRISTIANSAND S
Norway
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)

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SLOVENSKA TECHNICKA UNIVERZITA V BRATISLAVE
Slovakia

EU-Beitrag: EUR 110 517


VAZOVOVA 5
81243 BRATISLAVA
Slovakia
Activity type: Higher or Secondary Education Establishments

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LINKOPINGS UNIVERSITET
Sweden

EU-Beitrag: EUR 316 161


CAMPUS VALLA
581 83 LINKOPING
Sweden
Activity type: Higher or Secondary Education Establishments

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NORSTEL AB
Sweden

EU-Beitrag: EUR 169 919


PO BOX 734
601 16 NORKOPING
Sweden
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)

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ASCATRON AB
Sweden

EU-Beitrag: EUR 147 202


ISAFJORDSGATAN 22 ELECTRUM 207
164 40 KISTA
Sweden
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)

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