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CmOs Solutions for Mid-board Integrated transceivers with breakthrough Connectivity at ultra-low Cost

CmOs Solutions for Mid-board Integrated transceivers with breakthrough Connectivity at ultra-low Cost

Objective

The COSMICC consortium gathers key industrial and research partners with world-leading positions in the fields of Silicon photonics, CMOS electronics, Printed Circuit Board-Packaging, Optical transceivers and Data-Centers around a strong vision: mass commercialization of Si-photonics-based transceivers is possible starting in 2019 by enhancing the existing photonic integration platform of one of the partners, STMicroelectronics.
COSMICC will develop optical transceivers that will be packaged on-board. Combining CMOS electronics and Si-photonics with innovative-high-throughput fiber-attachment techniques, the developed solutions are scalable to meet the future data-transmission requirements in data-centers and Super computing systems. With performances improved by an order of magnitude as compared with current VCSELs transceivers, COSMICC developed technology will answer tremendous market needs with a target cost per bit that the traditional WDM transceivers cannot meet. The early setting up of a new value chain will enable exploitation of the developed technologies.
In a first high reward step-modification of the fabrication platform, COSMICC consortium will achieve mid-board optical transceivers in the [2Tbit/s -2pJ/bit- 0.2€ per Gbit/s]-class with ~200Gbit/s per fiber: the introduction of one process brick (SiN layer) in the photonic process will enable low-cost packaging techniques (up to 2x12 fiber channels) and practical coarse WDM implementation (4 wavelengths with no temperature-control requirements). The built demonstrators will be tested in lab and field environments. In compliancy with the enhanced-fabrication platform, lasers will be developed by heterogeneous integration of III-V material, targeting improved temperature behavior, and doubled-bit-rate payback.
A second step-modification of the fabrication platform will consist in evaluating a disruptive process that enables SiGe layers with tunable Si-composition for achieving micrometer-scale devices.

Coordinator

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Address

Rue Leblanc 25
75015 Paris 15

France

Activity type

Research Organisations

EU Contribution

€ 962 607,50

Participants (11)

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STMICROELECTRONICS CROLLES 2 SAS

France

EU Contribution

€ 692 707,50

UNIVERSITE PARIS-SUD

France

EU Contribution

€ 75 937,50

STMICROELECTRONICS SRL

Italy

EU Contribution

€ 352 250

UNIVERSITA DEGLI STUDI DI PAVIA

Italy

EU Contribution

€ 320 250

VARIO-OPTICS AG

Switzerland

SEAGATE SYSTEMS UK LIMITED

United Kingdom

EU Contribution

€ 180 912

UNIVERSITY OF SOUTHAMPTON

United Kingdom

EU Contribution

€ 476 427,50

THE UNIVERSITY COURT OF THE UNIVERSITY OF ST ANDREWS

United Kingdom

EU Contribution

€ 182 923

FINISAR GERMANY GMBH

Germany

EU Contribution

€ 192 812,50

AYMING

France

EU Contribution

€ 88 750

CORK INSTITUTE OF TECHNOLOGY

Ireland

EU Contribution

€ 211 320

Project information

Grant agreement ID: 688516

Status

Ongoing project

  • Start date

    1 December 2015

  • End date

    30 November 2019

Funded under:

H2020-EU.2.1.1.

  • Overall budget:

    € 3 993 684,51

  • EU contribution

    € 3 736 897,50

Coordinated by:

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

France