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3D Advanced Metrology and materials for advanced devices

3D Advanced Metrology and materials for advanced devices

Objective

The objective of the 3DAM project is to develop a new generation of metrology and characterization tools and methodologies enabling the development of the next semiconductor technology nodes. As nano-electronics technology is moving beyond the boundaries of (strained) silicon in planar or finFETs, new 3D device architectures and new materials bring major metrology and characterization challenges which cannot be met by pushing the present techniques to their limits.

3DAM will be a path-finding project which supports and complements several existing and future ECSEL pilot-line projects and is linked to the MASP area 7.1 (subsection More Moore). Innovative demonstrators and methodologies will be built and evaluated within the themes of metrology and characterization of 3D device architectures and new materials, across the full IC manufacturing cycle from Front to Back-End-Of-Line. 3D structural metrology and defect analysis techniques will be developed and correlated to address challenges around 3D CD, strain and crystal defects at the nm scale. 3D compositional analysis and electrical properties will be investigated with special attention to interfaces, alloys and 2D materials. The project will develop new workflows combining different technologies for more reliable and faster results; fit for use in future semiconductor processes.

The consortium includes major European semiconductor equipment companies in the area of metrology and characterization. The link to future needs of the industry, as well as critical evaluation of concepts and demonstrators, is ensured by the participation of IMEC and LETI. The project will directly increase the competitiveness of the strong Europe-based semiconductor Equipment industry. Closely connected European IC manufacturers will benefit by accelerated R&D and process ramp-up. The project will generate technologies essential for future semiconductor processes and for the applications enabled by the new technology nodes.

Coordinator

FEI ELECTRON OPTICS BV

Address

Achtseweg Noord Gebouw Aae 5
5651 Gg Eindhoven

Netherlands

Activity type

Private for-profit entities (excluding Higher or Secondary Education Establishments)

EU Contribution

€ 1 110 812,50

Participants (16)

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APPLIED MATERIALS ISRAEL LTD

Israel

EU Contribution

€ 740 625

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM

Belgium

EU Contribution

€ 873 666

NEDERLANDSE ORGANISATIE VOOR TOEGEPAST NATUURWETENSCHAPPELIJK ONDERZOEK TNO

Netherlands

EU Contribution

€ 628 813

NOVA MEASURING INSTRUMENTS LTD

Israel

EU Contribution

€ 600 000

BRUKER JV ISRAEL LTD

Israel

EU Contribution

€ 381 093,75

COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

France

EU Contribution

€ 525 062,50

ATTOLIGHT SA

Switzerland

SEMILAB FELVEZETO FIZIKAI LABORATORIUM RESZVENYTARSASAG

Hungary

EU Contribution

€ 531 250

CAMECA

France

EU Contribution

€ 344 562,50

ADAMA INNOVATIONS LIMITED

Ireland

EU Contribution

€ 90 810,38

FEI SAS

France

EU Contribution

€ 207 500

STMICROELECTRONICS CROLLES 2 SAS

France

TECHNISCHE UNIVERSITEIT EINDHOVEN

Netherlands

EU Contribution

€ 145 179,50

CAPRES AS

Denmark

EU Contribution

€ 77 474,25

DANMARKS TEKNISKE UNIVERSITET

Denmark

EU Contribution

€ 191 258,50

APPLIED MATERIALS FRANCE

France

EU Contribution

€ 15 718,75

Project information

Grant agreement ID: 692527

Status

Closed project

  • Start date

    1 April 2016

  • End date

    31 March 2019

Funded under:

H2020-EU.2.1.1.7.

  • Overall budget:

    € 23 055 897,50

  • EU contribution

    € 6 463 826,63

Coordinated by:

FEI ELECTRON OPTICS BV

Netherlands