Cel Graphene redirected the pathways of solid-state physics with a revival of 2-D materials showing Diracphysics due to their honeycomb geometry. The charge carriers are fundamentally different from thosein conventional electronic systems: the energy vs. wave vector relationship is linear instead ofquadratic, resulting in Dirac bands with massless carriers. A genuinely new class of materials willemerge provided that classic semiconductor compounds can be molded in the nanoscale honeycombgeometry: The Dirac-type band structure is then combined with the beneficial properties ofsemiconductors, e.g. a band gap, optical and electrical switching, and strong spin-orbit coupling. ThePI recently prepared atomically coherent 2-D PbSe and CdSe semiconductors by nanocrystal assemblyand epitaxial attachment. Moreover, he showed theoretically that these systems combine asemiconductor gap with Dirac-type valence and conduction bands, while the strong spin-orbitcoupling results in the quantum spin Hall effect. The ERC advanced grant will allow him to develop arobust bottom-up synthesis platform for 2-D metal-chalcogenide semiconductor compounds withhoneycomb nanoscale geometry. The PI will study their band structure and opto-electronic propertiesusing several types of scanning tunnelling micro-spectroscopy and optical spectroscopy. The Fermilevelwill be controlled with an electrolyte-gated transistor in order to measure the carrier transportproperties. The results will be compared directly with those obtained on the same 2-D semiconductorswithout honeycomb geometry, hence showing the conventional band structure. This shouldunambiguously reveal the Dirac features of honeycomb semiconductors: valence band and conductionband Dirac cones, non-trivial band openings at the K-points that may host the quantum spin Halleffect, and non-trivial flat bands. 2-D semiconductors with massless holes and electrons open newopportunities in opto-electronic devices and spintronics. Dziedzina nauki natural sciencesphysical scienceselectromagnetism and electronicsoptoelectronicsnatural sciencesphysical scienceselectromagnetism and electronicsspintronicsnatural sciencesphysical sciencescondensed matter physicssolid-state physicsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural sciencesmathematicspure mathematicsgeometry Program(-y) H2020-EU.1.1. - EXCELLENT SCIENCE - European Research Council (ERC) Main Programme Temat(-y) ERC-ADG-2015 - ERC Advanced Grant Zaproszenie do składania wniosków ERC-2015-AdG Zobacz inne projekty w ramach tego zaproszenia System finansowania ERC-ADG - Advanced Grant Instytucja przyjmująca UNIVERSITEIT UTRECHT Wkład UE netto € 2 500 000,00 Adres HEIDELBERGLAAN 8 3584 CS Utrecht Niderlandy Zobacz na mapie Region West-Nederland Utrecht Utrecht Rodzaj działalności Higher or Secondary Education Establishments Linki Kontakt z organizacją Opens in new window Strona internetowa Opens in new window Uczestnictwo w unijnych programach w zakresie badań i innowacji Opens in new window sieć współpracy HORIZON Opens in new window Koszt całkowity € 2 500 000,00 Beneficjenci (1) Sortuj alfabetycznie Sortuj według wkładu UE netto Rozwiń wszystko Zwiń wszystko UNIVERSITEIT UTRECHT Niderlandy Wkład UE netto € 2 500 000,00 Adres HEIDELBERGLAAN 8 3584 CS Utrecht Zobacz na mapie Region West-Nederland Utrecht Utrecht Rodzaj działalności Higher or Secondary Education Establishments Linki Kontakt z organizacją Opens in new window Strona internetowa Opens in new window Uczestnictwo w unijnych programach w zakresie badań i innowacji Opens in new window sieć współpracy HORIZON Opens in new window Koszt całkowity € 2 500 000,00