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Novel Quantum Emitters monolithically grown on Si, Ge and III-V substrates

Novel Quantum Emitters monolithically grown on Si, Ge and III-V substrates

Objective

We propose to forge a partnership between the leading European groups working on the next generation of solid state quantum emitters based on novel growth methods such as Droplet Epitaxy. Future, practical Nano-photonics and Quantum Circuits applications demand semiconductor quantum dots that can be grown on substrates with different lattice parameters (Si, Ge, GaAs), different substrate orientations (such as (001) and (111)) and tuneable optical, electrical and spin properties. All these requirements are met by high quality quantum dots grown with Droplet based Epitaxy techniques, circumventing the limitations of currently available systems based on strain-driven dot self-assembly. This vast novel research area at the crossroads of photonics, material science, quantum physics and nano-scale device fabrication will allow delivering top level multidisciplinary training to 15 early stage researcher (ESRs). The successful training of the ESRs by leading academic and 3 full industrial partners will be crucial for achieving the headline goals of this first ever consortium on droplet dot devices: (1) Entangled light emitting diodes with droplet dots grown on (111) substrates (2) Electrically triggered, droplet dot based single photon sources on Si/Ge substrates (3) Strain tuning in droplet dots without wetting layer: photon polarization and single spin control (4) Droplet Dot based single photon sources for non- classical light storage devices based on hybrid quantum systems (dots & laser-cooled atoms). The training and research progress will be discussed and monitored during the 4 project meetings, 3 summer schools and the final international conference on Droplet Dot Devices, all of which are open to the whole scientific community. We expect this network, based on the solid collaboration between growth groups, microscopists, quantum optics experimentalists and theorists to explore the full potential of this emerging technology.

Coordinator

UNIVERSITA' DEGLI STUDI DI MILANO-BICOCCA

Address

Piazza Dell'Ateneo Nuovo 1
20126 Milano

Italy

Activity type

Higher or Secondary Education Establishments

EU Contribution

€ 516 122,64

Participants (10)

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CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS

France

EU Contribution

€ 262 875,60

UNIVERSITAET HAMBURG

Germany

EU Contribution

€ 498 432,96

JULIUS-MAXIMILIANS-UNIVERSITAT WURZBURG

Germany

EU Contribution

€ 249 216,48

TECHNISCHE UNIVERSITEIT EINDHOVEN

Netherlands

EU Contribution

€ 510 748,56

SINGLE QUANTUM BV

Netherlands

EU Contribution

€ 255 374,28

UNIVERSITY COLLEGE LONDON

United Kingdom

EU Contribution

€ 273 287,88

THE UNIVERSITY OF SHEFFIELD

United Kingdom

EU Contribution

€ 273 287,88

TOSHIBA RESEARCH EUROPE LIMITED

United Kingdom

EU Contribution

€ 546 575,76

UNIVERSITAT BASEL

Switzerland

EU Contribution

€ 265 226,76

ATTOCUBE SYSTEMS AG

Germany

EU Contribution

€ 249 216,48

Partners (6)

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IOFFE PHYSICO-TECHNICAL INSTITUTE OF THE RUSSIAN ACADEMY OF SCIENCES

UNIVERSITA DEGLI STUDI DI FIRENZE

NATIONAL INSTITUTE FOR MATERIALS SCIENCE

UNIVERSITE D'AIX MARSEILLE

EPSRC III-V Semiconductor Technologies

KUNGLIGA TEKNISKA HOEGSKOLAN

Project information

Grant agreement ID: 721394

Status

Ongoing project

  • Start date

    1 January 2017

  • End date

    31 December 2020

Funded under:

H2020-EU.1.3.1.

  • Overall budget:

    € 3 900 365,28

  • EU contribution

    € 3 900 365,28

Coordinated by:

UNIVERSITA' DEGLI STUDI DI MILANO-BICOCCA

Italy