Skip to main content

Innovative Reliable Nitride based Power Devices and Applications

Objective

The main objective of this proposal is to develop reliable GaN-based power devices and systems for high and medium power electronics targeting industrial and automotive applications and bringing the GaN power devices another step towards the wide usability in the energy saving environment to further tap the full potential which this new material brings along.
This proposal addresses two subjects, one of which is medium power (till 10kW) GaN-on-Si based lateral HEMT structures (Normally OFF devices), with special focus on high reliability, which is still a major blocking item to allow wide-spread market adoption. Hence, the impact of the GaN material quality, in combination with the device layout in view of long-term reliability will be addressed. The project aims an in-depth reliability study and qualification strategy development whereby the study of the impact of dislocations and other structural disturbances inside the materials on the long term device reliability will be specifically addressed. In addition, this proposal aims to demonstrate new device concepts with increased robustness and reliability, which will be realized, evaluated and tested thoroughly. This will demonstrate how it is possible to overcome the known limitations of the GaN on Silicon technology, like e.g. the vertical leakage, trapping phenomena and/or breakdown of lateral HEMTs and the p-GaN gate related reliability issues. The current proposal also contains the development of novel device architecture (dual channel, substrate removal, e-mode), as well as the exploration of new material systems (Aluminum Nitride (Al-based) devices) which can also largely contribute to overcome drawbacks of the GaN on Si technology. The applicability of the novel GaN-on-Si concepts in form of an industrial inverter will be demonstrated finally, with the development of an innovative low inductance packaging system for power devices, making full benefits of the fast switching capability of GaN-based power devices.

Call for proposal

H2020-NMBP-2016-two-stage
See other projects for this call

Funding Scheme

RIA - Research and Innovation action

Coordinator

UNIVERSITA DEGLI STUDI DI PADOVA
Address
Via 8 Febbraio 2
35122 Padova
Italy
Activity type
Higher or Secondary Education Establishments
EU contribution
€ 650 000

Participants (10)

CONSTRUCTIONS ELECTRONIQUES + TELECOMMUNICATIONS
Belgium
EU contribution
€ 502 500
Address
Rue Du Charbonnage 12
4020 Liege
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
France
EU contribution
€ 636 083,75
Address
Rue Michel Ange 3
75794 Paris
Activity type
Other
ROBERT BOSCH GMBH
Germany
EU contribution
€ 950 000
Address
Robert-bosch-platz 1
70839 Gerlingen-schillerhoehe
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
Germany
EU contribution
€ 626 165
Address
Hansastrasse 27C
80686 Munchen
Activity type
Research Organisations
SIEMENS AKTIENGESELLSCHAFT
Germany
EU contribution
€ 750 000
Address
Werner-von-siemens-str. 1
80333 Munchen
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
SOITEC BELGIUM NV
Belgium
EU contribution
€ 744 980
Address
Kempische Steenweg 293
3500 Hasselt
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
ON SEMICONDUCTOR BELGIUM BVBA
Belgium
EU contribution
€ 1 825 271,25
Address
Westerring 15
9700 Oudenaarde
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
UNIVERSITEIT GENT
Belgium
EU contribution
€ 505 000
Address
Sint Pietersnieuwstraat 25
9000 Gent
Activity type
Higher or Secondary Education Establishments
NATIONAL UNIVERSITY CORPORATION MIE UNIVERSITY
Japan
EU contribution
€ 0
Address
1577 Kurima Machiya Cho
514 8570 Tsu Mie
Activity type
Higher or Secondary Education Establishments
NATIONAL UNIVERSITY CORPORATION KYUSHU UNIVERSITY
Japan
EU contribution
€ 0
Address
744 Motooka, Nishi-ku
819 0395 Fukuoka
Activity type
Higher or Secondary Education Establishments