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3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices

Objective

Silicon carbide presents a high breakdown field (2-4 MV/cm) and a high energy band gap (2.3–3.2 eV), largely higher than for silicon. Within this frame, the cubic polytype of SiC (3C-SiC) is the only one that can be grown on a host substrate with the huge opportunity to grow only the silicon carbide thickness required for the targeted application. The possible growth on silicon substrate has remained for long period a real advantage in terms of scalability regarding the reduced diameter of hexagonal SiC wafer commercially available. Even the relatively narrow band-gap of 3C-SiC (2.3eV), which is often regarded as detrimental in comparison with other polytypes, can in fact be an advantage. The lowering of the conduction band minimum brings about a reduced density of states at the SiO2/3C-SiC interface and MOSFET on 3C-SiC has demonstrated the highest channel mobility of above 300 cm2/(Vxs) ever achieved on SiC crystals, prompting a remarkable reduction in the power consumption of these power switching devices.
The electrical activity of extended defects in 3C SiC is a major concern for electronic device functioning. To achieve viable commercial yields the mechanisms of defects must be understood and methods for their reduction developed..
In this project new approaches for the reduction of defects will be used, working on new compliance substrates that can help to reduce the stress and the defect density at the same time. This growth process will be driven by numerical simulations of the growth and simulations of the stress reduction.
The structure of the final devices will be simulated using the appropriated numerical tools where new numerical model will be introduced to take into account the properties of the new material. Thanks to these simulations tools and the new material with low defect density, several devices that can work at high power and with low power consumption will be realized inside the project.
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Coordinator

CONSIGLIO NAZIONALE DELLE RICERCHE

Address

Piazzale Aldo Moro 7
00185 Roma

Italy

Activity type

Research Organisations

EU Contribution

€ 1 665 312,50

Participants (14)

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FRIEDRICH-ALEXANDER-UNIVERSITAET ERLANGEN NUERNBERG

Germany

EU Contribution

€ 439 875

L.P.E. SPA

Italy

EU Contribution

€ 848 125

NOVASiC SA

France

EU Contribution

€ 631 146,25

ANVIL SEMICONDUCTORS LTD

United Kingdom

EU Contribution

€ 534 375

ASCATRON AB

Sweden

EU Contribution

€ 500 000

UNIVERSITA' DEGLI STUDI DI MILANO-BICOCCA

Italy

EU Contribution

€ 399 250

SILVACO EUROPE LTD

United Kingdom

EU Contribution

€ 253 515

MOVERIM CONSULTING SPRL

Belgium

EU Contribution

€ 309 298,75

ION BEAM SERVICES

France

EU Contribution

€ 639 125

LINKOPINGS UNIVERSITET

Sweden

EU Contribution

€ 661 041,25

THE UNIVERSITY OF WARWICK

United Kingdom

EU Contribution

€ 643 965

STMICROELECTRONICS SRL

Italy

EU Contribution

€ 333 333,75

CUSIC INC.

Japan

SWANSEA UNIVERSITY

United Kingdom

EU Contribution

€ 139 460

Project information

Grant agreement ID: 720827

Status

Ongoing project

  • Start date

    1 January 2017

  • End date

    31 December 2020

Funded under:

H2020-EU.2.1.3.

  • Overall budget:

    € 8 048 322,50

  • EU contribution

    € 7 997 822,50

Coordinated by:

CONSIGLIO NAZIONALE DELLE RICERCHE

Italy