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3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices

Objective

Silicon carbide presents a high breakdown field (2-4 MV/cm) and a high energy band gap (2.3–3.2 eV), largely higher than for silicon. Within this frame, the cubic polytype of SiC (3C-SiC) is the only one that can be grown on a host substrate with the huge opportunity to grow only the silicon carbide thickness required for the targeted application. The possible growth on silicon substrate has remained for long period a real advantage in terms of scalability regarding the reduced diameter of hexagonal SiC wafer commercially available. Even the relatively narrow band-gap of 3C-SiC (2.3eV), which is often regarded as detrimental in comparison with other polytypes, can in fact be an advantage. The lowering of the conduction band minimum brings about a reduced density of states at the SiO2/3C-SiC interface and MOSFET on 3C-SiC has demonstrated the highest channel mobility of above 300 cm2/(Vxs) ever achieved on SiC crystals, prompting a remarkable reduction in the power consumption of these power switching devices.
The electrical activity of extended defects in 3C SiC is a major concern for electronic device functioning. To achieve viable commercial yields the mechanisms of defects must be understood and methods for their reduction developed..
In this project new approaches for the reduction of defects will be used, working on new compliance substrates that can help to reduce the stress and the defect density at the same time. This growth process will be driven by numerical simulations of the growth and simulations of the stress reduction.
The structure of the final devices will be simulated using the appropriated numerical tools where new numerical model will be introduced to take into account the properties of the new material. Thanks to these simulations tools and the new material with low defect density, several devices that can work at high power and with low power consumption will be realized inside the project.

Field of science

  • /natural sciences/chemical sciences/inorganic chemistry/inorganic compounds
  • /engineering and technology/materials engineering/crystals

Call for proposal

H2020-NMBP-2016-two-stage
See other projects for this call

Funding Scheme

RIA - Research and Innovation action

Coordinator

CONSIGLIO NAZIONALE DELLE RICERCHE
Address
Piazzale Aldo Moro 7
00185 Roma
Italy
Activity type
Research Organisations
EU contribution
€ 1 680 873,81

Participants (14)

FRIEDRICH-ALEXANDER-UNIVERSITAET ERLANGEN-NUERNBERG
Germany
EU contribution
€ 502 375
Address
Schlossplatz 4
91054 Erlangen
Activity type
Higher or Secondary Education Establishments
L.P.E. SPA
Italy
EU contribution
€ 910 625
Address
Via Dei Giovi 7
20021 Baranzate Milano
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
NOVASIC SA
France
EU contribution
€ 631 146,25
Address
Savoie Technolac Arche Bat 4 Alle Du Lac D Aiguebelette 17
73375 Le Bourget Du Lac
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
ANVIL SEMICONDUCTORS LTD

Participation ended

United Kingdom
EU contribution
€ 331 313,68
Address
Windmill Industrial Estate, Birmingham Road, Allesley
CV5 9QE Coventry
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
ASCATRON AB
Sweden
EU contribution
€ 500 000
Address
Isafjordsgatan 22 Electrum 207
164 40 Kista
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
UNIVERSITA' DEGLI STUDI DI MILANO-BICOCCA
Italy
EU contribution
€ 399 250
Address
Piazza Dell'ateneo Nuovo 1
20126 Milano
Activity type
Higher or Secondary Education Establishments
SILVACO EUROPE LTD
United Kingdom
EU contribution
€ 253 515
Address
Silvaco Technology Centre Compass Point
PE27 5JL St Ives
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
MOVERIM CONSULTING SPRL
Belgium
EU contribution
€ 309 298,76
Address
Square Ambiorix 32
1000 Bruxelles
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
ION BEAM SERVICES
France
EU contribution
€ 639 125
Address
Rue Gaston Imbert Prolongee
13790 Rousset
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
LINKOPINGS UNIVERSITET
Sweden
EU contribution
€ 661 041,25
Address
Campus Valla
581 83 Linkoping
Activity type
Higher or Secondary Education Establishments
THE UNIVERSITY OF WARWICK
United Kingdom
EU contribution
€ 706 465
Address
Kirby Corner Road - University House
CV4 8UW Coventry
Activity type
Higher or Secondary Education Establishments
STMICROELECTRONICS SRL
Italy
EU contribution
€ 333 333,75
Address
Via C.olivetti 2
20864 Agrate Brianza
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
CUSIC INC.
Japan
EU contribution
€ 0
Address
Sentokaikan Bld 2-2-10 Chuo Aoba Ku Sandai Shi Miy
980 0021 Sendai
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
SWANSEA UNIVERSITY
United Kingdom
EU contribution
€ 139 460
Address
Singleton Park
SA2 8PP Swansea
Activity type
Higher or Secondary Education Establishments