Periodic Reporting for period 2 - CHALLENGE (3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices)
Reporting period: 2018-07-01 to 2019-12-31
Furthermore, by using the typical bulk growth techniques used for 4H-SiC it is possible to grow bulk 3C-SiC wafers, improving considerably the quality of the material.
Currently silicon is the material of choice for power electronic applications where the inevitable power dissipation requires the use of very heavy and expensive heat sinks. The purpose of these undesirable heat sinks is to manage the device junction temperature, allowing operation in the range where Si devices are able to function. The reason is simple - the low Si band-gap.
The best alternative for these applications is 3C-SiC.
Some interesting results have been obtained in the reduction of voids at the 3C-SiC/Si interface, the reduction of protrusions both in hetero-epitaxial growth and in bulk growth, in the understanding of SFs behaviour and in the reduction of this kind of defects in bulk growth. Also the modelling of stress in compliance substrates has given new understanding on the growth process.