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300mm Pilot Line for Smart Power and Power Discretes

Periodic Reporting for period 2 - R3-PowerUP (300mm Pilot Line for Smart Power and Power Discretes)

Reporting period: 2018-11-01 to 2019-10-31

This is the SUMMARY of the second Project Periodic Report of R3-PowerUP.
The section is intended to be the link to the full document D7.2.2 that is attached as Tech-Report (PartB) core to this Summary and issued also as official deliverable D7.2.2 at M24.
In fact, the second Project Periodic Report explains the work carried out during the 2nd annual reporting period (i.e. Annual RP2 at M24) in line with the Amendment No.1 GA n.737417-19 to the Grant Agreement, which takes force from the beginning of the 2nd period, i.e. from 1st November 2018.

D7.2.2 gives an overview of the project results towards the objective of the action, in line with the structure of Amendment No.1 GA n.737417-19 to the Grant Agreement, including a summary of deliverables and milestones achived so far:
• For the full technical details, the reader should refer to the individual Deliverables issued for the related period.
• D7.2.2 builds upon D7.2.5 “2nd Interim report at M18” , already issued at the end of the 2nd interim semester, i.e. at M18.

On Period 1 - Novembre 2017- Octobre 2018 SOITEC perform at M15 (2019-01-3) the D1.1.2-Substrate characterization and validation of requirement.
On Period 2 - Novembre 2018- Octobre 2019 SOITEC doesn't report it work into a Deliverable but objectif was to perform targeted ST specifications in 200mm wafers:

Explanation why 200mm work before 300mm : The smartcut process doesn't allow to make the top Si layer up to 1.5µm in 300mm configuration. So, the existing process couldn't reach the target -15µm. The solution is to provide great Si layer for epitaxy deposition. The issue is the same for 200mm and 300mm. Currently ST orders 0.7/1µm SOI for Power and performs epitaxy in-house. As infrastructures and metrology already exist in house for Power-200mm, SOITEC has decided to start the epitaxy learning curve on 200mm diameter with external suppliers. Then, the knowledge will be transferred on Periode 3 into 300mm wafer to get the same process and specification.

To reach this goal, work in P2 was dedicated in Nov-June => Benchmark Epi suppliers according to requested specifications ; in Nov-March => Process issue and requirement and in Sep-Oct => qualification of The supplier. So Multiple test conducted with variations around initial specification provided by ST ( up to 15µm epi / 1µm box ) permit to

1- variation around specification ( Test on 5µm - 9µm epi / 1µm box : done on 60 wafers )
2-Evaluate robustness of SOI + Epi process in several conditions ( DOE test on 2µm epi / 1.2µm box : done on 75 wafers )
3-Vary Si thickness before Epi process.
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Periodic project Report for the first period, M13-M24, includes the detailed progress status of each Work Package.

Outline of the attached Report:
1 EXPLANATION OF THE WORK CARRIED OUT BY THE BENEFICIARIES AND OVERVIEW OF THE PROGRESS
1.1 Objectives and explanation of the work carried per WP
1.1.1 WP1 Manufacturing Pilot Line
1.1.2 WP2 Fab digitalization, yield improve and management
1.1.3 WP3 Technology research and development
1.1.4 WP4 Assembly, Packaging and 3D integration
1.1.5 WP5 Demonstrators
1.1.6 WP6 Dissemination, exploitation, standardization and communication
1.1.7 WP7 Project Management, Innovation and IPR
2 UPDATE OF THE PLAN FOR EXPLOITATION AND DISSEMINATION OF RESULT
3 UPDATE OF THE DATA MANAGEMENT PLAN
4 FOLLOW-UP OF RECOMMENDATIONS AND COMMENTS FROM PREVIOUS REVIEW(S)
5 DEVIATIONS FROM ANNEX 1 (AMENDMENT NO. 737417-19)
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