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High Performance and High Yield Heterogeneous III-V/Si Photonic Integrated Circuits using a Thin and Uniform Bonding Layer

Objective

The objective of PICTURE project is to develop a photonic integration technology by bonding multi-III-V-dies of different epitaxial stacks to SOI wafers with a thinner and uniform dielectric bonding layer. This heterogeneous integration platform will enable higher performance lasers and photo-detectors using the optimized III-V dies. In addition, the thinner bonding layer will lead to record performance MOSCAP III-V/Si modulators, and to a new generation of wavelength tunable distributed feedback lasers. Moreover the full process including SOI process, bonding, III-V and back-end process will be made on a 200mm R&D CMOS line, leading to higher yield, smaller footprint and lower cost PICs. Two types of PICs with a total capacity of 400Gb/s will be developed, packaged and validated in system configuration.
In parallel, PICTURE project will develop direct growth of high performance quantum-dot lasers and selective area growth on bonded templates for high density future generation of PICs.
The project is coordinated by III-V Lab, and includes University of Southampton, CEA, University College London, Imec, Tyndall, Argotech and Nokia Bell Labs. The consortium is highly complementary, covering all skills required to achieve the project objectives: growth of semiconductor materials, silicon process and III-V process, design and characterization of PICs, prototyping and assessment of PICs in high bit rate digital communication systems:
Apart from the adequacy of the consortium to achieve collectively the project objectives, the consortium partners have the potential to set up a comprehensive supply chain for the future exploitation of the project results, either by exploiting the results “in house” or by setting up suitable partnerships.

Field of science

  • /natural sciences/chemical sciences/inorganic chemistry/inorganic compounds
  • /natural sciences/physical sciences/electromagnetism and electronics/electrical conductivity/semiconductor
  • /natural sciences/physical sciences/optics/laser physics

Call for proposal

H2020-ICT-2017-1
See other projects for this call

Funding Scheme

RIA - Research and Innovation action

Coordinator

III-V LAB
Address
1 Avenue Augustin Fresnel Campus Polytechnique
91767 Palaiseau Cedex
France
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
EU contribution
€ 793 617,50

Participants (7)

UNIVERSITY OF SOUTHAMPTON
United Kingdom
EU contribution
€ 586 666,25
Address
Highfield
SO17 1BJ Southampton
Activity type
Higher or Secondary Education Establishments
COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
France
EU contribution
€ 880 093,75
Address
Rue Leblanc 25
75015 Paris 15
Activity type
Research Organisations
UNIVERSITY COLLEGE LONDON
United Kingdom
EU contribution
€ 369 287,50
Address
Gower Street
WC1E 6BT London
Activity type
Higher or Secondary Education Establishments
INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM
Belgium
EU contribution
€ 379 687,50
Address
Kapeldreef 75
3001 Leuven
Activity type
Research Organisations
UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK
Ireland
EU contribution
€ 325 145
Address
Western Road
T12 YN60 Cork
Activity type
Higher or Secondary Education Establishments
ARGOTECH AS
Czechia
EU contribution
€ 297 255
Address
Holubova 978
547 01 Nachod
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
NOKIA BELL LABS FRANCE
France
EU contribution
€ 292 780
Address
Site Nokia Paris Saclay, Route De Villejust
91620 Nozay
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)