Objectif This proposal presents an interdisciplinary, forward looking, training-by-research plan in the field of physical reliability modeling of emerging transistors and materials beyond 2020. Its main goal is development and validation of a simulation framework which self-consistently considers the main reliability phenomena including bias temperature instability, hot-carrier degradation, and self-heating. These effects were suggested to be the response of interface and oxide defects/precursors which can be activated by different driving forces determined by device operating conditions and specifics of the device topology. Thus, the core of this project will be put on a detailed microscopic description of the properties of defects/precursors, which will be studied experimentally and theoretically.Within this defect-centric paradigm we will address reliability issues in devices with emerging architectures, i.e. fin and nanowire transistors, high-k gate dielectrics, and high mobility channel materials such as SiGe, Ge, and III-V alloys. The unifying model building on the microscopic defect properties will be validated over a wide range of device bias conditions. We will capture the parasitic effect of self-heating which has a strong impact on the energetic distribution of hot carriers and hence on hot-carrier degradation. Special attention will be paid to time-dependent variability of device characteristics which is a response of nanoscale devices on activation/deactivation of individual defects. Knowledge acquired within this project will be valuable for applied and fundamental physics, material science, computational chemistry, electrical engineering, VLSI technology, and circuit design. The research and training activities will enhance applicant’s future career by broadening his professional skills and expertise, expose him to industrial requirements, and open new perspectives for future collaboration with industry. Champ scientifique natural sciencesmathematicspure mathematicstopologyengineering and technologyelectrical engineering, electronic engineering, information engineeringelectrical engineering Programme(s) H2020-EU.1.3. - EXCELLENT SCIENCE - Marie Skłodowska-Curie Actions Main Programme H2020-EU.1.3.2. - Nurturing excellence by means of cross-border and cross-sector mobility Thème(s) MSCA-IF-2017 - Individual Fellowships Appel à propositions H2020-MSCA-IF-2017 Voir d’autres projets de cet appel Régime de financement MSCA-IF-EF-ST - Standard EF Coordinateur INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM Contribution nette de l'UE € 172 800,00 Adresse KAPELDREEF 75 3001 Leuven Belgique Voir sur la carte Région Vlaams Gewest Prov. Vlaams-Brabant Arr. Leuven Type d’activité Research Organisations Liens Contacter l’organisation Opens in new window Site web Opens in new window Participation aux programmes de R&I de l'UE Opens in new window Réseau de collaboration HORIZON Opens in new window Coût total € 172 800,00