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Laser EnAbled TransFer of 2D Materials

Objective

2D Layered Materials (2D LM) hold enormous promise for enabling new device concepts and novel applications, owing to their planar nature and their exquisite, tuneable properties. Despite the rapid advancement of many aspects of Layered Materials (LM) technology, many emerging applications are hampered by the lack of an efficient, defect-free and controllable technique for the transfer of pixels of LM onto desired substrates. The core concept of this proposal is the development of a novel nano-manufacturing technology based on laser transfer techniques, which will enable the rapid, intact transfer and engineering of 2D stacks and heterostructures for optoelectronic, photonic and organic electronic devices. To achieve this, we will benefit from the unique advantages of the Laser Induced Backward Transfer (LIBT) and Laser Induced Forward Transfer (LIFT) techniques, which among other attributes, offer the capability for intact transfer of any 2D LM with high lateral resolution (micron scale), the transfer of 2D heterostructures and compatibility with a variety of substrates, including Si and flexible substrates. The implementation of the proposed technology will offer a chemical- and defect -free transfer of 2D monolayers with high precision: exquisitely clean Si-2D semiconductor (SC) heterostructures will be demonstrated using LDT and enable the fabrication of Near-IR Si emitters. Single layer and defect – free Graphene pixels will be printed on flexible substrates for highly sensitive ultra-thin sensors. These breakthroughs in the fields of Si emitters and flexible touch sensors will validate the importance of LEAF-2D and facilitate the incorporation of 2D materials in a plethora of emerging technological fields.

Field of science

  • /natural sciences/physical sciences/electromagnetism and electronics/electrical conductivity/semiconductor
  • /engineering and technology/nanotechnology/nano-materials/two-dimensional nanostructures/graphene
  • /natural sciences/physical sciences/optics/laser physics

Call for proposal

H2020-FETOPEN-1-2016-2017
See other projects for this call

Funding Scheme

RIA - Research and Innovation action

Coordinator

NATIONAL TECHNICAL UNIVERSITY OF ATHENS - NTUA
Address
Heroon Polytechniou 9 Zographou Campus
15780 Athina
Greece
Activity type
Higher or Secondary Education Establishments
EU contribution
€ 634 625

Participants (6)

UNIVERSITY OF SOUTHAMPTON
United Kingdom
EU contribution
€ 583 780
Address
Highfield
SO17 1BJ Southampton
Activity type
Higher or Secondary Education Establishments
BAR ILAN UNIVERSITY
Israel
EU contribution
€ 719 250
Address
Bar Ilan University Campus
52900 Ramat Gan
Activity type
Higher or Secondary Education Establishments
MELLANOX TECHNOLOGIES LTD - MLNX
Israel
EU contribution
€ 497 500
Address
Yokneam Ilit Industrial Zone - Hermon Building
20692 Yokneam
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
GRAPHENEA SA

Participation ended

Spain
EU contribution
€ 0
Address
Paseo Mikeletegi 83
20009 San Sebastian Guipuzcoa
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
MARIOS LYMARAKIS KAI SIA EE
Greece
EU contribution
€ 115 875
Address
Ethnikis Antistaseos 132
15344 Gerakas Attiki
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
GRAPHENEA SEMICONDUCTOR SL
Spain
EU contribution
€ 300 000
Address
Ps Mikeletegi 83
20009 Donostia
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)