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Laser EnAbled TransFer of 2D Materials

Objective

2D Layered Materials (2D LM) hold enormous promise for enabling new device concepts and novel applications, owing to their planar nature and their exquisite, tuneable properties. Despite the rapid advancement of many aspects of Layered Materials (LM) technology, many emerging applications are hampered by the lack of an efficient, defect-free and controllable technique for the transfer of pixels of LM onto desired substrates. The core concept of this proposal is the development of a novel nano-manufacturing technology based on laser transfer techniques, which will enable the rapid, intact transfer and engineering of 2D stacks and heterostructures for optoelectronic, photonic and organic electronic devices. To achieve this, we will benefit from the unique advantages of the Laser Induced Backward Transfer (LIBT) and Laser Induced Forward Transfer (LIFT) techniques, which among other attributes, offer the capability for intact transfer of any 2D LM with high lateral resolution (micron scale), the transfer of 2D heterostructures and compatibility with a variety of substrates, including Si and flexible substrates. The implementation of the proposed technology will offer a chemical- and defect -free transfer of 2D monolayers with high precision: exquisitely clean Si-2D semiconductor (SC) heterostructures will be demonstrated using LDT and enable the fabrication of Near-IR Si emitters. Single layer and defect – free Graphene pixels will be printed on flexible substrates for highly sensitive ultra-thin sensors. These breakthroughs in the fields of Si emitters and flexible touch sensors will validate the importance of LEAF-2D and facilitate the incorporation of 2D materials in a plethora of emerging technological fields.

Call for proposal

H2020-FETOPEN-2016-2017

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Sub call

H2020-FETOPEN-1-2016-2017

Coordinator

ETHNICON METSOVION POLYTECHNION
Net EU contribution
€ 634 625,00
Address
Heroon Polytechniou 9 Zographou Campus
157 80 Athina
Greece

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Region
Κεντρικός Τομέας Αθηνών Aττική Αττική
Activity type
Higher or Secondary Education Establishments
Other funding
€ 0,00

Participants (6)

UNIVERSITY OF SOUTHAMPTON
United Kingdom
Net EU contribution
€ 583 780,00
Address
Highfield
SO17 1BJ Southampton

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Region
South East (England) Hampshire and Isle of Wight Southampton
Activity type
Higher or Secondary Education Establishments
Other funding
€ 0,00
BAR ILAN UNIVERSITY
Israel
Net EU contribution
€ 719 250,00
Address
Bar Ilan University Campus
52900 Ramat Gan

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Activity type
Higher or Secondary Education Establishments
Other funding
€ 0,00
MELLANOX TECHNOLOGIES LTD - MLNX
Israel
Net EU contribution
€ 497 500,00
Address
Yokneam Ilit Industrial Zone - Hermon Building
20692 Yokneam

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Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Other funding
€ 0,00
GRAPHENEA SA

Participation ended

Spain
Net EU contribution
€ 0,00
Address
Paseo Mikeletegi 83
20009 San Sebastian Guipuzcoa
SME

The organization defined itself as SME (small and medium-sized enterprise) at the time the Grant Agreement was signed.

Yes
Region
Noreste País Vasco Gipuzkoa
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Other funding
€ 0,00
MARIOS LYMARAKIS KAI SIA EE
Greece
Net EU contribution
€ 115 875,00
Address
Kleisthenous 187
15344 Gerakas Attiki

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SME

The organization defined itself as SME (small and medium-sized enterprise) at the time the Grant Agreement was signed.

Yes
Region
Ανατολική Αττική Aττική Αττική
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Other funding
€ 0,00
GRAPHENEA SEMICONDUCTOR SL
Spain
Net EU contribution
€ 300 000,00
Address
Ps Mikeletegi 83
20009 Donostia

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SME

The organization defined itself as SME (small and medium-sized enterprise) at the time the Grant Agreement was signed.

Yes
Region
Noreste País Vasco Gipuzkoa
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Other funding
€ 0,00