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Light Induced Bipolar Electrochemical Doping in Perovskite Devices

Light Induced Bipolar Electrochemical Doping in Perovskite Devices


Photonic and electronic devices are developed by manipulating the electronic structure of semiconductors and dielectric materials. Fabrication routes that utilize lithography, ion implantation, and self-assembly are expensive or hard to control. Ion-doped organic semiconducting films hold the potential for easy-to-fabricate single-layered devices via solution-based deposition techniques. Currently, flexible devices are fabricated as a stack of uniform thin films with single or multiple semiconducting layers. Modifying the two-dimensional (2D) electronics structure in each film allows for making complex three dimensional (3D) on-chip photonic and electronic devices.
Solid-state bipolar electrochemistry was demonstrated in planar Light-emitting Electrochemical Cells (LECs). A conducting floating bipolar electrode (BPE) is placed between the driving electrodes were redox reactions take place driven by the potential drop at the BPE-extremities. Recently, light was shown to induce the same effect in the mixed (ionic-electronic) conducting films.
Here, we propose to utilize this non-contact method to locally induce doping in perovskite nanoparticle photonic devices, aiming for two major finding. On one hand, we will take advantage of this optical technique to study degradation mechanism in perovskite nanoparticle surrounded by ionic electrolytes in order to identify the best electrolyte towards enhancing device performance. On the other hand, we will explore new 2D photonic patterns written in planar and flexible perovskite photonic devices. Methods to fix doping in the formed devices will be established. This includes post-doping polymerization or cross linking, as well as high-temperature glass transition ionic conductor along with photothermal nanoparticles.
Success of this project will be of high interest for research and industrial applications in perovskite photonics focused on, for example, lighting, lasers sensing and data processing.
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Calle Eric Kandel 2 Parque Cientifico Y Tecnologico Tecnogetafe
28906 Getafe


Activity type

Higher or Secondary Education Establishments

EU Contribution

€ 160 932,48

Project information

Grant agreement ID: 839661


Grant agreement signed

  • Start date

    1 September 2020

  • End date

    31 August 2022

Funded under:


  • Overall budget:

    € 160 932,48

  • EU contribution

    € 160 932,48

Coordinated by: