Studying implications of defect (trap) states on 2D materials
Two-dimensional (2D) materials have attracted increasing attention in the last decade. With ultrathin thickness having shown extraordinary optical, electronic and optoelectronic properties, 2D materials are used in semiconductors. Compared to traditional 3D semiconductors, they allow higher integration density. The EU-funded project TRAPS-2D will improve the performance of 2D materials through defect engineering. The aim is to resolve the low performance and to achieve a complementary-metal-oxide (CMOS) technology co-integration. TRAPS-2D will conduct a systematic study of the implications of defect (trap) states on 2D materials. The project’s findings will ultimately result in greatly improved commercial electronic applications.
Fields of science
- engineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensorsoptical sensors
- engineering and technologynanotechnologynano-materialstwo-dimensional nanostructures
- natural sciencesphysical scienceselectromagnetism and electronicssemiconductivity
Funding SchemeMSCA-IF-GF - Global Fellowships
Partner organisations contribute to the implementation of the action, but do not sign the Grant Agreement.
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