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Understanding The Role of the defects to Accomplish high Performance and Stable Two Dimensional Devices

Project description

Studying implications of defect (trap) states on 2D materials

Two-dimensional (2D) materials have attracted increasing attention in the last decade. With ultrathin thickness having shown extraordinary optical, electronic and optoelectronic properties, 2D materials are used in semiconductors. Compared to traditional 3D semiconductors, they allow higher integration density. The EU-funded project TRAPS-2D will improve the performance of 2D materials through defect engineering. The aim is to resolve the low performance and to achieve a complementary-metal-oxide (CMOS) technology co-integration. TRAPS-2D will conduct a systematic study of the implications of defect (trap) states on 2D materials. The project’s findings will ultimately result in greatly improved commercial electronic applications.

Coordinator

UNIVERSIDAD DE GRANADA
Net EU contribution
€ 165 666,88
Address
Cuesta Del Hospicio Sn
18071 Granada
Spain

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Region
Andalucía Granada
Activity type
Higher or Secondary Education Establishments
Other funding
€ 165 666,88

Partners (1)

Partner

Partner organisations contribute to the implementation of the action, but do not sign the Grant Agreement.

NATIONAL CHIAO TUNG UNIVERSITY
Taiwan
Net EU contribution
€ 0,00
Address
University Road 1001
30010 Hsinchu

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Activity type
Higher or Secondary Education Establishments
Other funding
€ 0,00