A new approach to nanoscale patterning
Nanoscale patterning of materials is becoming crucial for many devices, especially in the back end of line. Given Intel’s latest 10 nm node, new ways of mastering selective deposition of materials at the nanoscale need to be developed. Selective deposition may lead to a paradigm shift in patterning at future semiconductor technology nodes. With this in mind, the EU-funded NADIA project aims to demonstrate spatial control over a deposited thin film. To do this, it will make use of area-selective deposition (ASD) by atomic layer deposition. This has a number of possible benefits for future device processing and can help to overcome process integration challenges at the sub-10 nm nodes.
Call for proposal
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