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Towards optical communication on silicon chips

Project description

Hexagonal silicon–germanium structure could help squeeze light out of silicon chips

For more than half a century, silicon has been the raw material of choice in microelectronics. Emitting light from this material has been the holy grail in the microelectronics industry, as chips would become faster than ever. However, silicon, germanium and silicon–germanium alloys are all indirect band gap semiconductors that cannot emit light efficiently. Researchers’ efforts are now devoted to combining silicon and germanium in a hexagonal structure that can emit light, as it seems to have a direct band gap. The goal of the EU-funded Opto silicon project is to integrate light-emitting devices based on hexagonal silicon–germanium with existing silicon electronics and passive silicon photonics circuitry. The new technology could significantly improve computing performance while also reducing silicon wafer costs.

Call for proposal

H2020-FETOPEN-2018-2019-2020-01
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Coordinator

TECHNISCHE UNIVERSITEIT EINDHOVEN
Address
Groene Loper 3
5612 AE Eindhoven
Netherlands
Activity type
Higher or Secondary Education Establishments
EU contribution
€ 1 268 140

Participants (4)

IBM RESEARCH GMBH
Switzerland
EU contribution
€ 793 750
Address
Saeumerstrasse 4
8803 Rueschlikon
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
TECHNISCHE UNIVERSITAET MUENCHEN
Germany
EU contribution
€ 578 580
Address
Arcisstrasse 21
80333 Muenchen
Activity type
Higher or Secondary Education Establishments
FRIEDRICH-SCHILLER-UNIVERSITAT JENA
Germany
EU contribution
€ 518 900
Address
Furstengraben 1
07743 Jena
Activity type
Higher or Secondary Education Establishments
UNIVERSITE PARIS-SACLAY
France
EU contribution
€ 593 758
Address
Batiment Breguet - 3 Rue Joliot Curie
91190 Gif-sur-yvette
Activity type
Higher or Secondary Education Establishments