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Contenuto archiviato il 2022-12-23

Optical investigation of chemical bonds and electronic properties of (001) semiconductor surfaces

Obiettivo



The aim of this project is to use optical techniques (reflectance difference spectroscopy RDS or reflectance anisotropy spectroscopy RAS) to clarify some of the main unresolved problems of (001) semiconductor surfaces and in particular GaAs: spectroscopy of the clean surface, chemical and electronic passivation by sulfur or hydrogen atoms, adsorption of electropositive caesium or electronegative oxygen atoms, formation of surface barrier.

The application of these techniques to investigate surface chemistry is a new concept. The main interest of this approach relies on: the simplicity of these optical techniques, which enables these results to be correlated with investigations of the electronic properties of the surface. Photoemission techniques do not easily permit this comparison due to the limited access time of current storage rings; the ability to operate on surfaces with defects or in ambient or liquid environments; and the expected strong sensitivity of these techniques to slight modifications of surface chemistry.

The project will consist in: building of a UHV chamber adapted to the use of optical techniques in Saint Petersburg; transfer of technologies (UHV to Saint Petersburg, RAS to Rome); performing of a control experiment to test the UHV chamber, which will be built in St. Petersburg, and detailed analysis and comparison of the data obtained in similar experimental conditions in Palaiseau and Rome laboratories, using RAS as a bridge between the three groups.

Invito a presentare proposte

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Meccanismo di finanziamento

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Coordinatore

Ecole Polytechnique
Contributo UE
Nessun dato
Indirizzo

91128 Palaiseau
Francia

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Costo totale
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Partecipanti (2)