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Zawartość zarchiwizowana w dniu 2022-12-23

Structural and electronic properties of the type I InAs/GaAs and type II GaSb/GaAs quantum dots

Cel



Insight into the fundamental physical properties of the novel semiconductor structures quantum dots, as well as in physical processes during their formation, will be gained by this project.

One of the most promising methods of creating quantum dot structures - the strain induced self-organized growth process, will be used in the work. A uniform array of quantum dots may be formed by molecular beam epitaxy by depositing a critical amount of lattice mismatched material on the substrate surface. Using this approach for InAs/GaAs the St. Petersburg team has increased recently the quality of the structures up to a level where laser emission becomes possible.

This experience and achievement will be followed and combined with complementary extensive experience in the investigation of quantum size effect structures and the unique techniques of the other participating groups: the local cathodoluminescence technique with an unmatched combination of high lateral and time resolution in a wide temperature range will enable the investigation of the electron spectra and relaxation processes in a single quantum dot and directly connect them with structural properties (Berlin group); photoluminescence and photoluminescence excitation spectra investigations in high magnetic fields will enable the evaluation of the degree of carrier localization and the role of inhomogeneous broadening (Sheffield group); and a structural investigation by highly developed TEM and HREM techniques will enable detailed examination of the structural properties and strain redistribution and relaxation processes (Halle group); investigation of self-organized formation of quantum dots by means of scanning tunnelling microscopy (St. Petersburg).

This combination of highly qualified groups and unique techniques make it quite likely that the following goals will be achieved: the clarification of mechanisms of strain redistribution and relaxation during formation of dots in strained systems; the characterisation of electronic spectra and carrier relaxation and recombination mechanisms; and the finding of interconnections between structural and electronic properties of quantum dot structures and methods to control via growth parameters their characteristics.

Zaproszenie do składania wniosków

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System finansowania

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Koordynator

Technische Universität Berlin
Wkład UE
Brak danych
Adres
Hardenbergstraße 36
10623 Berlin
Niemcy

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Koszt całkowity
Brak danych

Uczestnicy (4)