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Zone-melting recrystallization and development of technologies for the preparation of multilayer silicon-on-insulator microstructures with specific characteristics of insulating layers for the fabrication of integrated circuits and high-tem

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Silicon-on-insulator (SOI) substrates are used to fabricate high-performance integrated circuits. This material is also well suited for some special niche applications such as high-temperature circuits and radiation-hard circuits. In particular, stable operation of SOI integrated circuits at temperatures above 300 degrees C has been obtained at the Université Catholique de Louvain and operation under irradiation at doses above 100 megarads has been demonstrated by LETI.

Well designed electronic components can help to reduce the problems faced by the NIS of dismantling obsolete or dangerous nuclear power plants and cleaning up heavily radioactive nuclear waste disposal sites. To take one example, robots sent into the Chernobyl nuclear plant after the accident rapidly failed because their on-board electronics could not handle the radiation level. Personnel then tried to fix the problems inside the plant at the expense of their health. Temperature- and radiation- resistant electronic chips and sensors on board the robots might have helped to make things easier and safer.

In the present project the preparation of SOI films by the zone-melting recrystallization process for applications in microelectronics and microsensors, especially in radiation-hard and high-temperature circuit areas,will be the subject of international collaboration. Silicon wafers capped with different insulators and polysilicon will be fabricated by the Institute for Semiconductor Physics, Kiev, and recrystallized by the Institute of Crystallography, Moscow to produce SOI wafers. Test integrated circuits will be fabricated by the ISP and microsensor elements will be made by the Technische Universitët Berlin in these SOI wafers. The Université Catholique de Louvain will simulate the fabrication process steps and test the devices under radiation and high-temperature conditions.

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Universite Catholique de Louvain
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Place du Levant 3
1348 Louvain-la-Neuve
Belgien

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