The main knowledge and technology to be transferred is the applicant's experience in characterization of grown-in and process-induced defects and stresses in semiconductors by means of X-ray diffraction techniques and his potential to contribute significantly to the research of surface damage depth profiling and lateral mapping after wafer surface preparation. His multiple beam diffracting technique can be useful base for the development of new techniques related to subsurface damage profiling and characterization and understanding of stresses and defects generation and treatment in semiconductor wafers.