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Sige channel and source/drain engineering for deep sub-micron CMOS

Ziel

The aim of the SIGMOS project is to search for novel solutions to fundamental problems of CMOS channel and source/drain engineering. SiGe(C) will be incorporated into the channels of p- and n-channel MOS transistors, with the aim of obtaining improved device performance. New device architectures will be explored which are consistent with SiGe(C), including elevated SiGe sources/drains and vertical channels. The most promising devices will be implemented using a state of the art CMOS process in the EURACCESS facility. The aim of the SIGMOS project is to search for novel solutions to fundamental problems of CMOS channel and source/drain engineering. SiGe(C) will be incorporated into the channels of p- and n-channel MOS transistors, with the aim of obtaining improved device performance. New device architectures will be explored which are consistent with SiGe(C), including elevated SiGe sources/drains and vertical channels. The most promising devices will be implemented using a state of the art CMOS process in the EURACCESS facility.

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Koordinator

UNIVERSITY OF SOUTHAMPTON
EU-Beitrag
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Adresse
HIGHFIELD
SO17 1BJ SOUTHAMPTON
Vereinigtes Königreich

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Beteiligte (7)