The aim of the SIGMOS project is to search for novel solutions to fundamental problems of CMOS channel and source/drain engineering. SiGe(C) will be incorporated into the channels of p- and n-channel MOS transistors, with the aim of obtaining improved device performance. New device architectures will be explored which are consistent with SiGe(C), including elevated SiGe sources/drains and vertical channels. The most promising devices will be implemented using a state of the art CMOS process in the EURACCESS facility. The aim of the SIGMOS project is to search for novel solutions to fundamental problems of CMOS channel and source/drain engineering. SiGe(C) will be incorporated into the channels of p- and n-channel MOS transistors, with the aim of obtaining improved device performance. New device architectures will be explored which are consistent with SiGe(C), including elevated SiGe sources/drains and vertical channels. The most promising devices will be implemented using a state of the art CMOS process in the EURACCESS facility.