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Stress minimization on deep sub-micron CMOS processes, measured by a high spatial resolution technique, and its application to 0.15 micron non volatile memories

Objective

This project deals with one of the major issues of concern for the deep submicron CMOS technology, namely the mechanical stresses built up in the layers and substrate during processing. STREAM aims at the routine determination of stress in the 0.15m generation of non volatile memories by the convergent beam diffraction technique of transmission electron microscopy (TEM/CBED) with a spatial resolution down to 1 nm; this will be achieved by the development of a software package, which will digitally acquire the diffraction patterns and yield the strain tensor in the corresponding nanoregions of the structure. This stress information in silicon will help improving the existing stress simulation models. These upgraded models will be used to set up the feedback to modify the technological process flow of the 0.15m CMOS, in order to minimize the stress.
* Implementation and integration of all the components that are part of the Hope reference architecture into the final prototype of the HOPE system
* Production of the final prototype of the Course Content Material, which has been integrated in the System Prototype
* Following the Trial specifications, which have provided the necessary infrastructure for the operation of the trials, we have proceeded with the evaluation and validation of the system. This also implied the definition of the specific evaluation criteria and the installation of the Hope system at each of the three pilot sites (located one in Spain and two in Greece)
*Real users (young prisoners) in the pilot sites have tested the final prototype. Validation reports have been produced based on questionnaires and interviews made to the users of the system.

Call for proposal

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Coordinator

CONSIGLIO NAZIONALE DELLE RICERCHE
EU contribution
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Address
PIAZZALE ALDO MORO 7
00185 ROMA
Italy

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Total cost
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Participants (7)