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Characterisation of ultra-thin high-k oxide layers (CUHKO)

Characterisation of ultra-thin high-k oxide layers (CUHKO)

Objective

The project addresses the development of the analysis techniques needed for the full physical characterization of the new thin high-k dielectric layers which are now in the development phase and which will be essential for the future sub 100 nm device technologies. The emphasis of the project is on analysis techniques that have the potential for fast, non-destructive in-line application and on a number of complementary techniques that need developments related to quantification and depth resolution. The goal is the combination of complementary analysis on the same samples so that by the mutual input, the different measurement and analysis procedures can be fully qualified leading to well established and directly applicable methodologies for the quality control of these layers. Emphasis is related to the layer thickness, the interfacial layer and the quantification of the composition including contaminants.

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Coordinator

INTERUNIVERSITAIR MIKRO-ELEKTRONICA CENTRUM VZW

Address

Kapeldreef 75
3001 Heverlee

Belgium

Administrative Contact

Gilbert DECLERCK (Professor)

Participants (5)

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COMMISSARIAT A L'ENERGIE ATOMIQUE

France

FACULTES UNIVERSITAIRES NOTRE-DAME DE LA PAIX DE NAMUR

Belgium

SOCIÉTÉ DE PRODUCTION ET DE RECHERCHE APPLIQUÉE - SOPRA

France

TECHNICAL UNIVERSITY OF MUNICH

Germany

VG SYSTEMS LTD / TRADING AS THERMO VG SCIENTIFIC

United Kingdom

Project information

Grant agreement ID: G6RD-CT-2001-00621

  • Start date

    1 January 2002

  • End date

    31 December 2003

Funded under:

FP5-GROWTH

  • Overall budget:

    € 1 023 584

  • EU contribution

    € 650 573

Coordinated by:

INTERUNIVERSITAIR MIKRO-ELEKTRONICA CENTRUM VZW

Belgium