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High resolution temperature measurements on high power devices and ics

High resolution temperature measurements on high power devices and ics

Objective

The aim of the project is to develop high-resolution temperature measurement on semiconductor devices. This project addresses various domains of the semiconductor industry including both high power devices mostly for the telecommunication, aeronautic and aerospace markets but also the microprocessor industry where the dramatic effect of size shrinking and transistor density has made the heating problem one of the key points of their reliability. Two sides of the thermal management field will be addressed: Failure analysis which requires tools able to easily locate over-heated areas (hot spots) on a defective device and Reliability Analysis which needs to precisely determine the temperature of the active part of a device in order to correctly optimise the associated cooling systems and estimate its lifetime. Thermal Photo reflectance and Scanning Thermal Microscopy will be investigated.

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Coordinator

THALES S.A.

Address

Domaine De Corbeville
91404 Orsay

France

Administrative Contact

Laure REINHART (Mr)

Participants (6)

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CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

France

KELVIN NANOTECHNOLOGY LTD

United Kingdom

RUHR-UNIVERSITY BOCHUM

Germany

ST MICROELECTRONICS SRL.

Italy

UNIVERSITY OF GLASGOW

United Kingdom

UNIVERSITY OF LANCASTER

United Kingdom

Project information

Grant agreement ID: G6RD-CT-2002-00686

  • Start date

    1 June 2002

  • End date

    30 June 2005

Funded under:

FP5-GROWTH

  • Overall budget:

    € 2 223 549

  • EU contribution

    € 1 494 339

Coordinated by:

THALES S.A.

France