Cel The project is devoted to extensive studies of impurity oxygen in heat-treated silicon under mechanical stresses of up to 1GPa. Conceptually, it opens up new aspects of a materials problem that has great scientific and practical importance for this fundamental material of modern electronics.The investigations to be carried out in the project will focus on:- effects of mechanical stresses of around 1GPa upon the dynamical properties of impurity oxygen atoms in agglomeration and precipitation processes in silicon over a wide temperature range of heat treatment from T = 400(C to T = 1000 C);- the role of oxygen dimmers in diffusion processes and their modifications under compressive and tensile stresses;- identification of the dominant kinds of electrically and optically active oxygen aggregates formed in silicon under hydrostatic pressures of 0.8GPa to 1.5GPa;- determination of the most prominent differences in oxygen agglomeration processes in stressed silicon with sub-critical and super-critical oxygen contents;- the effects of external stresses upon oxygen agglomeration in silicon which contains the isoelectronic impurities carbon and germanium;- studies of the modifications of defect interactions between oxygen atoms, in isolated and aggregated forms, and intrinsic point defects in silicon under compressive stress.To achieve these aims of the project, a powerful combination of experimental techniques will be used, among them infrared absorption, Raman spectroscopy, deep level transient spectroscopy, photoluminescence, electron spin resonance and Hall effect measurements. Analysis and computer simulations of the formation kinetics of the oxygen aggregates under different conditions of heat treatment will allow the changes in the parameters controlling oxygen diffusion and agglomeration processes to be mapped over a wide temperature range.The knowledge gained in the present project will also contributes considerably to understanding the complicated behaviour of oxygen impurity in the similar semiconductor, germanium. Program(-y) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Temat(-y) 1B - Condensed Matter, Optics and Plasma Physics OPEN - OPEN Call Zaproszenie do składania wniosków Data not available System finansowania Data not available Koordynator King's College London Wkład UE Brak danych Adres Strand WC2R 2LS London Zjednoczone Królestwo Zobacz na mapie Koszt całkowity Brak danych Uczestnicy (6) Sortuj alfabetycznie Sortuj według wkładu UE Rozwiń wszystko Zwiń wszystko National Academy of Science of Belarus Białoruś Wkład UE Brak danych Adres P. Brovki street 17 220072 Minsk Zobacz na mapie Koszt całkowity Brak danych Russian Academy of Sciences Rosja Wkład UE Brak danych Adres Politekhnicheskaya 26 194021 St. Petersburg Zobacz na mapie Koszt całkowity Brak danych Russian Academy of Sciences Rosja Wkład UE Brak danych Adres 603600 Nizhny Novgorod Zobacz na mapie Koszt całkowity Brak danych UNIVERSITY OF AMSTERDAM Niderlandy Wkład UE Brak danych Adres VALCKENIERSTRAAT, 65 AMSTERDAM Zobacz na mapie Koszt całkowity Brak danych University of Athens Grecja Wkład UE Brak danych Adres Panepistimiopolis, Zografos 157 84 Athens Zobacz na mapie Koszt całkowity Brak danych University of Lund Szwecja Wkład UE Brak danych Adres Professorsgatan 1 221 00 Lund Zobacz na mapie Koszt całkowity Brak danych