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Zawartość zarchiwizowana w dniu 2022-12-23

Stress-induced effects on oxygen agglomeration processes and defect interactions in silicon

Cel

The project is devoted to extensive studies of impurity oxygen in heat-treated silicon under mechanical stresses of up to 1GPa. Conceptually, it opens up new aspects of a materials problem that has great scientific and practical importance for this fundamental material of modern electronics.

The investigations to be carried out in the project will focus on:
- effects of mechanical stresses of around 1GPa upon the dynamical properties of impurity oxygen atoms in agglomeration and precipitation processes in silicon over a wide temperature range of heat treatment from T = 400(C to T = 1000 C);
- the role of oxygen dimmers in diffusion processes and their modifications under compressive and tensile stresses;
- identification of the dominant kinds of electrically and optically active oxygen aggregates formed in silicon under hydrostatic pressures of 0.8GPa to 1.5GPa;
- determination of the most prominent differences in oxygen agglomeration processes in stressed silicon with sub-critical and super-critical oxygen contents;
- the effects of external stresses upon oxygen agglomeration in silicon which contains the isoelectronic impurities carbon and germanium;
- studies of the modifications of defect interactions between oxygen atoms, in isolated and aggregated forms, and intrinsic point defects in silicon under compressive stress.

To achieve these aims of the project, a powerful combination of experimental techniques will be used, among them infrared absorption, Raman spectroscopy, deep level transient spectroscopy, photoluminescence, electron spin resonance and Hall effect measurements. Analysis and computer simulations of the formation kinetics of the oxygen aggregates under different conditions of heat treatment will allow the changes in the parameters controlling oxygen diffusion and agglomeration processes to be mapped over a wide temperature range.
The knowledge gained in the present project will also contributes considerably to understanding the complicated behaviour of oxygen impurity in the similar semiconductor, germanium.

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Koordynator

King's College London
Wkład UE
Brak danych
Adres
Strand
WC2R 2LS London
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