Objetivo Ge/Si based QD nanostructures have decisive advantages among different types of semiconductor QD structures prepared by different growth techniques due to their compatibility with silicon technology. These nanostructures are considered as a material basis for the production of new types of nanodevices for nanoelectronics and optoelectronics. However, despite several years of effort, the physical advantages of Ge/Si QD based devices have not yet been entirely realised. One of the key reason of this is the size and shape inhomogeneity of QDs resulting in the broadening of electronic states which prevents the ultimate characteristics of nanodevices.This research project is aimed at the development of a growth technology for nanostructures with small size, uniform shape and narrow distribution of QDs. Within the frame of the project, the interdependence of structural, electronic and vibration properties of Ge/Si QD structures will be studied to improve significantly the performance of nanodevices.To accomplish the project goals a number of structural, optical and electrical experimental methods will be employed. The experimental data will be analysed in order to develop consistent models of the QD formation process, electronic and vibrational spectra and recombination processes in QDs. The fulfilment of this project will enable to discriminate between the available theoretical models to determine quantitatively the parameters of the participating species. The fulfilment of the project is also important from an applied point of view, because the clarification of the growth mechanism, the interdependence of growth parameters with electronic, and optical properties of QD will enable one to work out recommendations for the practical application of QD nanostructures in optoelectronics devices. Programa(s) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Tema(s) 1B - Condensed Matter, Optics and Plasma Physics NANO - NANO : Nano-scale Materials and Structures Convocatoria de propuestas Data not available Régimen de financiación Data not available Coordinador Technische Universitat Chemnitz Aportación de la UE Sin datos Dirección Reichenhainer Str. 70 09107 Chemnitz Alemania Ver en el mapa Coste total Sin datos Participantes (5) Ordenar alfabéticamente Ordenar por aportación de la UE Ampliar todo Contraer todo Eindhoven University of Technology Países Bajos Aportación de la UE Sin datos Dirección Den Dolech 2 5600 MB Eindhoven Ver en el mapa Coste total Sin datos Linkoeping University Suecia Aportación de la UE Sin datos Dirección IFM, Physics House 58183 Linkoping Ver en el mapa Coste total Sin datos National Academy of Sciences of Ukraine Ucrania Aportación de la UE Sin datos Dirección Prospect Nauki, 45 252028 Kiev Ver en el mapa Coste total Sin datos Russian Academy of Sciences Rusia Aportación de la UE Sin datos Dirección 603600 Nizhny Novgorod Ver en el mapa Coste total Sin datos Siberian Branch of Russian Academy of Sciences Rusia Aportación de la UE Sin datos Dirección pr. Lavrentjeva 13 630090 Novosibirsk Ver en el mapa Coste total Sin datos