Objective Deposition of silicon carbide films using Molecular Beam Epitaxy and Low Pressure Chemical Vapour Deposition were investigated. Deposition by MBE was performed using Solid Source MBE and Gas Source MBE. The different stages of film growth were investigated and special emphasis was laid on the initial growth phase, where film nucleation and growth under different growth conditions were analysed.Polycrystalline and amorphous silicon carbide films were grown by LPCVD. This technique when compared to other methods has the advantage of deposition over a large area. A thorough investigation of the silicon carbide film quality depending on different deposition parameters was performed in order to establish optimised film characteristics. Processing technologies for silicon carbide are important as they provide test devices for the characterization of the silicon carbide material deposited and also lead to enabling technologies that are required for the design of prospective devices. Technological areas that have been successfully investigated include doping of SiC films by high temperature implantation, electrical contacts to SiC material and etching of SiC films.Transducer effects like Hall effect, thermoresistive effect and piezoresistive effect were characterized. The gauge factors of the thin SiC films were determined using the beam deflection technique. The piezoresistive effect was examined in relation to doping and temperature.The project is primarily devoted to deposition of amorphous,polycrystalline and monocrystalline silicon carbide films by means of LPCVD and MBE,their doping during deposition and by ion implantation and fundamental investigations into those physical and optical effects (Hall effect,magnetoresistive effect, thermoresistive effect,photoresistive effect,photoelectric effect) which can be used for design and implementation of integrated microsystems. Research into the morphology of films by means of TEM,XRD and Raman spectroscopy will provide insight into their structure, chemistry and growth mechanisms.A further important subject involves the fabrication of high-temperature resistant contacts (up to 800 C) on n-and p-materials as well patterning of SiC films by means of dry-etching methods.The outcome of the work should provide a basis for the design of integrated systems incorporating sensors with improved performance and reliability. Fields of science natural scienceschemical sciencesinorganic chemistryinorganic compoundsengineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensorsnatural scienceschemical sciencesinorganic chemistrymetalloidsnatural sciencesphysical sciencesopticsspectroscopy Programme(s) FP3-BRITE/EURAM 2 - Specific programme (EEC) of research and technological development in the field of industrial and materials technologies, 1990-1994 Topic(s) 1.4.3 - Electrical and ionic conducting materials Call for proposal Data not available Funding Scheme CSC - Cost-sharing contracts Coordinator Technische Universität Berlin EU contribution No data Address Gustav-Meyer-Allee 25 13355 Berlin Germany See on map Total cost No data Participants (4) Sort alphabetically Sort by EU Contribution Expand all Collapse all FOUNDATION FOR RESEARCH & TECH. HELLAS Greece EU contribution No data Address MATZAPETAKI 21, P.O. BOX 1527 71110 HERAKLION-CRETE See on map Total cost No data UNIV ARISTOTLE THESSALONIKI Greece EU contribution No data Address 54006 THESSALONIKI See on map Total cost No data UNIV AUTONOMA BARCELONA Spain EU contribution No data Address 08193 BELLATERRA 08103 BELLATERRA See on map Total cost No data UNIVERSITE DE MONTPELLIER II - SCIENCES ET TECHNIQUES DU LANGUEDOC France EU contribution No data Address Place Eugène Bataillon 34095 MONTPELLIER See on map Total cost No data