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Content archived on 2022-12-23

Material Science and Crystal Growth of Detector Grade CdTe and CdZnTe with Controlled Stoichiometry

Objective

CdTe and CdZnTe are the most promising semiconductor materials for substrates in IR detectors, X-ray and g-ray detectors for medical and industrial applications and nuclear radiation monitoring. These applications require large semi-insulating single crystals. To prepare such materials, a strict in situ composition control of the growing crystal is of primary importance, since the properties of II-VI materials are known to be strongly dependent on the non-stoichiometry of the crystal. This project is aimed at bringing about fundamental understanding of the relationship between stoichiometry and properties of II-VI materials CdTe and CdZnTe and, on this basis, to create crystal growth technologies capable of producing materials with the highest achievable properties to be utilized in devices.

Two crystal growth technologies are proposed to be developed: growth from the vapour phase by Modified Markov Technique and from melt, by Horizontal Bridgman. The characteristic feature of this project is that it is based on vapour pressure scanning (VPS) - a new method, which proved to be able to determine the composition of the crystalline phase with an unparalleled accuracy of 10-4 - 10-5 at. directly at high temperature. Hence, VPS makes it possible to grow crystals with preliminary fixed and precisely in situ controlled stoichiometry.

The prepared materials will be fully characterized and tested in nuclear radiation detectors. The project will be completed by recommendations for up scaling the experimental equipment for industrial applications.

Call for proposal

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Funding Scheme

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Coordinator

Albert-Ludwigs-Universität Freiburg
EU contribution
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Address
Hebelstrasse 25
79104 Freiburg
Germany

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Total cost
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Participants (4)