Objectif Over the last few years' studies of defects in Si, Ge and Si1-xGex-solid solutions have become central to the future development of semiconductor devices and systems. In the case of silicon, the key material in electronics, the continued reduction of the feature size in ULSI is necessitating the solution of the problem of transient enhanced diffusion of implanted doping impurities. The most problematic issue is the enhanced diffusion of boron and the attainability of high doping levels. There are many other defect related issues such as removal of implant and etching damage and for some applications radiation hardness. To overcome these technological problems, a deeper understanding of the defect chemistry of silicon is required. This especially concerns the self-interstitial- and interstitial boron-related defects.The Si1-xGex solid solutions are promising materials for high-speed electronic systems. These circumstances have stimulated the intense studies of defect behaviour and impurity diffusion in Si1-xGex, but no consistent picture even for the most simple defect complexes has emerged yet.The main aim of the project is to bring together experimental and theoretical groups that are working on the problem of defect engineering in Si, Ge and Si-Ge alloys and to achieve a deeper understanding of the defect dynamics and diffusion in these materials. The studies will be focused on interstitial-type defects and impurities like boron that appear to be the most technologically important. The complementary facilities of the teams in experimental techniques (FTIR, photoluminescence, DLTS, Laplace DLTS, SIMS, spreading resistance probe, Hall effect etc.), materials (Si crystals enriched with oxygen and carbon isotopes, Ge crystals enriched with oxygen isotopes as well as with 74Ge, Si1-xGex single crystals and epitaxial layers) and irradiation tools (H-plasma, g-rays, MeV electrons, high-energy protons and ions), in combination with ab-initio modelling should enable the many questions related to interstitial defect reactions and diffusion in Si, Ge and Si1-xGex to be answered.The objectives of the project are to:-identify the main electrically and optically active defects associated with sel- and impurity (B, Al, O, C) interstitial atoms in Si, Ge and SiGe alloys, including complexes of Si(Ge) self-interstitial with oxygen dimer, BiBs, BiOi, BiCs- Gain a fundamental understanding of dynamics and diffusion mechanisms of interstitial boron (aluminium) and oxygen atoms in SiGe alloys- Understand effect of hydrogen on diffusion of interstitial impurity atoms in SiGe-based materials.The proposed project is expected to have a high impact on both fundamental and applied semiconductor physics. The results obtained should provide a science base for many aspects of Si and SiGe technologies related to interstitial defect reactions and diffusion, i.e. growth, implantation, gettering etc. Programme(s) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Thème(s) BELARUS - BELARUS Appel à propositions Data not available Régime de financement Data not available Coordinateur University of Manchester Institute of Science and Technology Contribution de l’UE Aucune donnée Adresse Sackville Street M60 1QD Manchester Royaume-Uni Voir sur la carte Coût total Aucune donnée Participants (8) Trier par ordre alphabétique Trier par contribution de l’UE Tout développer Tout réduire Belarusian State University / Physical Faculty Biélorussie Contribution de l’UE Aucune donnée Adresse F.Scariny Avenue 4 220050 Minsk Voir sur la carte Coût total Aucune donnée Institute of Crystal Growth Allemagne Contribution de l’UE Aucune donnée Adresse Max-Born-Str. 2 12489 Berlin Voir sur la carte Coût total Aucune donnée Lund University Suède Contribution de l’UE Aucune donnée Adresse Professorsgatan 1 S-221 00 Lund Voir sur la carte Coût total Aucune donnée National Academy of Sciences of Belarus Institute of Solid State and Semiconductor Physics Biélorussie Contribution de l’UE Aucune donnée Adresse P. Brovki 17 220072 Minsk Voir sur la carte Coût total Aucune donnée National Academy of Sciences of Ukraine Institute of Physics Ukraine Contribution de l’UE Aucune donnée Adresse Prospekt Nauki 46 03028 Kiev Voir sur la carte Coût total Aucune donnée University Norvège Contribution de l’UE Aucune donnée Adresse Blindern, Sem Salands vei 24 NO-0316 Oslo Voir sur la carte Coût total Aucune donnée University of Aveiro Portugal Contribution de l’UE Aucune donnée Adresse Campus de Santiago 3810-193 Aveiro Voir sur la carte Coût total Aucune donnée University of Exeter Royaume-Uni Contribution de l’UE Aucune donnée Adresse Stocker Rd. EX44QL Exeter Voir sur la carte Coût total Aucune donnée
