Obiettivo The project is devoted to the High Frequency/ High Magnetic Field (HF/HF) Electron Paramagnetic Resonance (EPR) and Optically Detected EPR (ODEPR) study of the intrinsic defects and impurities responsible for the semi-insulating (s.-i.) properties SiC material to be able to adjust and optimise the growth parameters of s.-i. SiC large wafers. The investigation of paramagnetic intrinsic defects in s.-i. 4H, 6H SiC will be carried out through measurements of the EPR spectrum at three microwave frequencies 9, 37, 140 GHz and ODEPR spectrum at two microwave frequencies 37, 60 GHz, before and after annealing the samples in the temperature interval from 1400 C to 1800 C. The influence of the different growth parameters such as growth rate, temperature, pressure, doping level and degree of compensation on the behaviour of EPR and ODEPR spectra will be studied. The correlation between the concentration, type of the intrinsic defects and technology condition of preparation of s.-i. SiC will be established. Microscopic models for intrinsic defects will be proposed on the base of EPR spectrum symmetry, the hyperfine structure due to the interaction with adjacent Si (C) neighbours, and the energy level, charge, spin characteristics of the defects. The investigation of carrier recombination process in s.-i. SiC and identification of the intrinsic defects, impurities involving into the donor acceptor recombination process will be performed through the ODEPR, photo-EPR methods including photo-excitation and photo-quenching technique and investigation of the microwave photoconductivity by photoconductive EPR (PCEPR) method. To determine the energy characteristics of intrinsic defects, the EPR spectra will be studied in the wide temperature interval from 77 K to 4.2 K in the dark and under illumination of the sample with light in the range of 360-900nm. The theoretical value of the formation energies, ionisation levels, geometries and charge states of the relaxed structures for the defects residing hexagonal and cubic lattice site will be take into consideration to confirm the identification of the intrinsic defects. This project will be undertaken in close collaboration with the Research Group from Karmon Ltd., Saint-Petersburg, Russia who will provide s.-i. SiC samples and technological characteristics of the material. The results obtained will be used for optimisation of the growth parameters that will promote a low cost yield of s.-i. SiC wafers. The advantage of the project is that the high-resolution magnetic resonance methods will be applied to the investigations of intrinsic defects in SiC, which greatly enhances the sensitivity and spectral resolution of magnetic resonance techniques. Moreover the hyperfine ligand structure for intrinsic defects could be better recognized and identified using the multi frequency EPR measurements. Programma(i) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Argomento(i) OPEN - OPEN Call Invito a presentare proposte Data not available Meccanismo di finanziamento Data not available Coordinatore Physics University of Paderborn Contributo UE Nessun dato Indirizzo Warburger Strasse 100 D-33098 Paderborn Germania Mostra sulla mappa Costo totale Nessun dato Partecipanti (4) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto Academy Institute of Physics Polish Academy of Science Polonia Contributo UE Nessun dato Indirizzo al.Lotnikow 32 02668 Warsaw Mostra sulla mappa Costo totale Nessun dato Academy of Science Institute of Semiconductors Ucraina Contributo UE Nessun dato Indirizzo Pr.Nauki 45 03028 Kiev Mostra sulla mappa Costo totale Nessun dato N-Crystals, Ltd. Russia Contributo UE Nessun dato Indirizzo Engels av. 27 194156 St.Petersburg Mostra sulla mappa Costo totale Nessun dato University of Dnepropetrovsk Ucraina Contributo UE Nessun dato Indirizzo Nauchnaya 13 49050 Dnepropetrovsk Mostra sulla mappa Costo totale Nessun dato
