Obiettivo The present Project is aimed at the generation of monocrystal Ge nano-islands at very high density and extra small size in Si matrix. For expanding possibilities of the method for synthesis of quantum dots of extremely small size and high density, the MBE technique will be improved by generating quantum dots on silica, low-temperature growth, the use of ion component of Ge flux evaporated from an electron beam evaporator with potential applied to the substrate, formation of islands during growth of the wetting layer and in prepatterned oxide windows. The studies will be focused on establishing the mechanism and kinetics of surface processes, kinetics of nucleation during MBE growth of Ge on Si and the influence of misfit strains on uniformity and ordering degree of 3D germanium islands. Experimental data to be obtained will be the basis for modelling and theoretical description of the observed processes.The general objective of the theoretical part of the Project is to gain an understanding of the main mechanisms responsible for the formation of quantum dots in the Ge/Si(111) and Ge/Si(001) MBE systems. In particular, kinetics of the upward material transport during growth of multi-level Ge islands on Si(111) and kinetics of the early stage of 2D-3D transformation in the low-temperature Ge/Si(001) epitaxy will be studied. Besides, will be investigated of the effect of ion influence on processes of germanium islands formation with the purpose to find the ways to reduce of the germanium quantum dots sizes and increase their density by using the ions generated by electron-beam evaporation of germanium, as well as the extension of physical comprehension of a matter of ion flux influence on processes on a growth surface.Studies of electronic and optical properties of the quantum dots will allow the influence of the size and ordering degree on their gap structure to be established. The investigations of ultra-small Ge quantum dots include theoretical and experimental inspection of electronic spectrum, configuration of electron and hole confined states, electrical and optical phenomena, mechanisms of charge transport in dense arrays of self-assembled Ge nano-clusters in Si. Also, we aim to integrate scientific and technical expertise from INTAS and NIS countries in order to exchange the information and technology in a most effective manner.The generated arrays of quantum dots will be compared using various techniques with respect to their optical and electron properties. The conclusion will be made regarding potentialities of each of the preparation method. The results obtained under the Project will promote practical use of Ge quantum dot arrays in Si in optoelectronic and microwave devices and in new generation of transistors. Better understanding of the fundamental aspects of quantum dot formation and properties will be gained. Programma(i) IC-INTAS - International Association for the promotion of cooperation with scientists from the independent states of the former Soviet Union (INTAS), 1993- Argomento(i) OPEN - OPEN Call Invito a presentare proposte Data not available Meccanismo di finanziamento Data not available Coordinatore University of Stuttgart Institute of Semiconductor Engineering (IHT) Contributo UE Nessun dato Indirizzo Pfaffenwaldring 47 70569 Stuttgart Germania Mostra sulla mappa Costo totale Nessun dato Partecipanti (6) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto Johannes Kepler University, Inst. Semiconductor Physics Austria Contributo UE Nessun dato Indirizzo Altenberger Str. 69 A-4040 Linz Mostra sulla mappa Costo totale Nessun dato Russian Academy of Sciences P.N.Lebedev Physical Institute Russia Contributo UE Nessun dato Indirizzo Lenisky pr. 53 119991 Moscow Mostra sulla mappa Costo totale Nessun dato Siberian Branch of the RAS Institute of Semiconductors Physics Russia Contributo UE Nessun dato Indirizzo Academician Lavrentiev 13 630090 Novosybirsk Mostra sulla mappa Costo totale Nessun dato Tomsk State University Russia Contributo UE Nessun dato Indirizzo pr. Lenina 36 634050 Tomsk Mostra sulla mappa Costo totale Nessun dato University of Aveiro Portogallo Contributo UE Nessun dato Indirizzo Campus de Santiago 3810-193 Aveiro Mostra sulla mappa Costo totale Nessun dato Uzbek Academy of Sciences Institute of Electronics Uzbekistan Contributo UE Nessun dato Indirizzo F. Khodjaev 33 700125 Tashkent Mostra sulla mappa Costo totale Nessun dato
