The aim of this project is the investigation and development of highly effective light emitting media based on Si:RE with the purpose to realize waveguide and microcavity structures for amplification of 1.54 mm emission. The efforts of the participating scientific teams will be directed towards the investigations of mechanisms governing the luminescence of RE elements in silicon and silicon heterogeneous media. In the framework of this project it will be developed new technological approaches, produced and analyzed novel materials and light-emitting structures for Si based optoelectronics, namely: Er-doped nanocrystalline Si structures, SiOx:Er precipitate-containing structures, nanosized multilayer Si:Er/Si and SiGe:Er/Si structures, Er-doped porous anodic alumina and thin xerogel films produced by the sol-gel deposition technique. Advantages of this heterogeneous media combining Er-doped Si nanocrystals in silicon dioxide or amorphous Si as well as Er doped SiOx precipitates in silicon matrixes will be used to obtain materials with the space separated Er excitation and emission regions, what is proposed to give strong enhancement of excitation efficiency of RE ions suppressing at the same time PL temperature quenching. The origin of optically and electrically active centers and the intermediate states, related with rare-earth ions, and their responsibility for temperature quenching of Er-related luminescence will be studied, as well as the center formation processes. Experimental and theoretical considerations of the gain in RE doped heterogeneous media will be given and device structures will be developed. Successful fulfillment of the project goals will give a good chance to fabricate an efficient optical amplifier for 1.54 mm wavelength region and possible a laser structure.
194021 St. Petersburg
603950 Nizhny Novgorod