Objetivo Silicon CMOS is rapidly running out of steam and the entire semiconductor industry is puzzled about what comes next as the roadmap advances towards the terahertz region. It is clear that virtually every material (gate, gate oxide and channel) used in the current transistor must be replaced within the next 3 - 4 years, without interruption in the industry's pace.Two high mobility material classes are emerging as potential silicon replacement: germanium (Ge) and compound semiconductors (CS). The goal of this project is to find out which one presents the best future technology platform. This formidable question requires a major rethinking of all materials and processes. It will be addressed here from all relevant aspects: advanced large area wafers, novel gate stacks and transistor processing. With a strict focus on a simple and well- defined process-flow as well as an innovative, fast materials characterization track, the main strengths and showstoppers for each material system will be identified.The first objective is to demonstrate that high mobility large area compliant substrates of Ge-on-insulator (GOI) and CS- on-insulator (CSOI) can be obtained. GOI, and CSOI will be grown by developing a "strained oxide template on Si" technology based on molecular beam epitaxy (MBE). The second objective is to demonstrate high quality gate stacks on Ge and CS. The challenge is to find suitable high-k compounds that can be used as gate dielectrics while maintaining high channel mobilities. The development of amorphous or epitaxial (for double gate) metal gates is also an essential project component. The third objective is to integrate the new channel and gate materials with a 200 mm semiconductor wafer processing line to demonstrate high mobility transistors for a few well chosen material systems. Ámbito científico natural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural scienceschemical sciencesinorganic chemistrymetalloids Palabras clave Nanotechnology Programa(s) FP6-IST - Information Society Technologies: thematic priority under the specific programme "Integrating and strengthening the European research area" (2002-2006). Tema(s) IST-2002-2.3.1.1 - Pushing the limits of CMOS, preparing for post-CMOS Convocatoria de propuestas Data not available Régimen de financiación STREP - Specific Targeted Research Project Coordinador NATIONAL CENTRE FOR SCIENTIFIC RESEARCH "DEMOKRITOS" Aportación de la UE Sin datos Dirección Patriarchou gregoriou street 15310 Aghia paraskevi attikis Grecia Ver en el mapa Coste total Sin datos Participantes (7) Ordenar alfabéticamente Ordenar por aportación de la UE Ampliar todo Contraer todo CONSIGLIO NAZIONALE DELLE RICERCHE Italia Aportación de la UE Sin datos Dirección Ver en el mapa Enlaces Sitio web Opens in new window Coste total Sin datos DCA-INSTRUMENTS OY Finlandia Aportación de la UE Sin datos Dirección Vajossuonkatu 8 20360 Turku Ver en el mapa Coste total Sin datos ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE Suiza Aportación de la UE Sin datos Dirección 1015 Lausanne Ver en el mapa Coste total Sin datos INTERNATIONAL BUSINESS MACHINES CORPORATION Estados Unidos Aportación de la UE Sin datos Dirección New orchard road NY 10504 Armonk Ver en el mapa Coste total Sin datos INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW Bélgica Aportación de la UE Sin datos Dirección Kapeldreef 75 3001 Leuven Ver en el mapa Coste total Sin datos NXP SEMICONDUCTORS BELGIUM NV Bélgica Aportación de la UE Sin datos Dirección Interleuvenlaan 80 Leuven Ver en el mapa Coste total Sin datos TECHNISCHE UNIVERSITAET CLAUSTHAL Alemania Aportación de la UE Sin datos Dirección Adolph-roemer-strasse 2a 38678 Clausthal-zellerfeld Ver en el mapa Coste total Sin datos