Objectif Silicon CMOS is rapidly running out of steam and the entire semiconductor industry is puzzled about what comes next as the roadmap advances towards the terahertz region. It is clear that virtually every material (gate, gate oxide and channel) used in the current transistor must be replaced within the next 3 - 4 years, without interruption in the industry's pace.Two high mobility material classes are emerging as potential silicon replacement: germanium (Ge) and compound semiconductors (CS). The goal of this project is to find out which one presents the best future technology platform. This formidable question requires a major rethinking of all materials and processes. It will be addressed here from all relevant aspects: advanced large area wafers, novel gate stacks and transistor processing. With a strict focus on a simple and well- defined process-flow as well as an innovative, fast materials characterization track, the main strengths and showstoppers for each material system will be identified.The first objective is to demonstrate that high mobility large area compliant substrates of Ge-on-insulator (GOI) and CS- on-insulator (CSOI) can be obtained. GOI, and CSOI will be grown by developing a "strained oxide template on Si" technology based on molecular beam epitaxy (MBE). The second objective is to demonstrate high quality gate stacks on Ge and CS. The challenge is to find suitable high-k compounds that can be used as gate dielectrics while maintaining high channel mobilities. The development of amorphous or epitaxial (for double gate) metal gates is also an essential project component. The third objective is to integrate the new channel and gate materials with a 200 mm semiconductor wafer processing line to demonstrate high mobility transistors for a few well chosen material systems. Champ scientifique natural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural scienceschemical sciencesinorganic chemistrymetalloids Mots‑clés Nanotechnology Programme(s) FP6-IST - Information Society Technologies: thematic priority under the specific programme "Integrating and strengthening the European research area" (2002-2006). Thème(s) IST-2002-2.3.1.1 - Pushing the limits of CMOS, preparing for post-CMOS Appel à propositions Data not available Régime de financement STREP - Specific Targeted Research Project Coordinateur NATIONAL CENTRE FOR SCIENTIFIC RESEARCH "DEMOKRITOS" Contribution de l’UE Aucune donnée Adresse Patriarchou gregoriou street 15310 Aghia paraskevi attikis Grèce Voir sur la carte Coût total Aucune donnée Participants (7) Trier par ordre alphabétique Trier par contribution de l’UE Tout développer Tout réduire CONSIGLIO NAZIONALE DELLE RICERCHE Italie Contribution de l’UE Aucune donnée Adresse Voir sur la carte Liens Site web Opens in new window Coût total Aucune donnée DCA-INSTRUMENTS OY Finlande Contribution de l’UE Aucune donnée Adresse Vajossuonkatu 8 20360 Turku Voir sur la carte Coût total Aucune donnée ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE Suisse Contribution de l’UE Aucune donnée Adresse 1015 Lausanne Voir sur la carte Coût total Aucune donnée INTERNATIONAL BUSINESS MACHINES CORPORATION États-Unis Contribution de l’UE Aucune donnée Adresse New orchard road NY 10504 Armonk Voir sur la carte Coût total Aucune donnée INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW Belgique Contribution de l’UE Aucune donnée Adresse Kapeldreef 75 3001 Leuven Voir sur la carte Coût total Aucune donnée NXP SEMICONDUCTORS BELGIUM NV Belgique Contribution de l’UE Aucune donnée Adresse Interleuvenlaan 80 Leuven Voir sur la carte Coût total Aucune donnée TECHNISCHE UNIVERSITAET CLAUSTHAL Allemagne Contribution de l’UE Aucune donnée Adresse Adolph-roemer-strasse 2a 38678 Clausthal-zellerfeld Voir sur la carte Coût total Aucune donnée