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Tuneable nano-magnetic oscillators for integrated transceiver application

Tuneable nano-magnetic oscillators for integrated transceiver application

Objective

None of the RF oscillators existing today combines a high quality resonance, a high level of integration (for low power and low cost) and wideband tunability. The recent discovery of the `magnetic flute¿, a nanopatterned ferromagnetic device in which high quality tunable microwave oscillations can be generated by a small DC current [S.I. Kiselev et. al., Nature 425, 380 (2003)], opens perspectives to solve the paradigms in microwave engineering design. This project aims at demonstrating the breakthrough concept of the magnetic flute in a nanoscale microwave integrated X-band oscillator for application in the domain of wireless integrated devices.

The frequency of the oscillation can be tuned by a magnetic field as well as by the current in a range of 5- 40 GHz. Quality factors as high as 18000 have been observed, making the magnetic flute a natural current-controlled RF oscillator (CCO). This fully electronic device is extremely suitable for integration because of the nanoscale dimensions (diameter of the contact 100 nm) and the simple structure of the metallic magnetic multi-layer that is compatible with the back end flow of standard Si or III-V technology.

The projects aims to study the oscillating modes as well as the influence of parameters (e.g. temperature, geometry,..) on the microwave frequency, power and phase noise. A potential bottleneck for exploitation of this nanomagnetic oscillator is low output power, however, monolithic integration with a high-gain RF amplifier is expected to boost the output power to levels desirable in wireless applications.

The integrated oscillator will be implemented in the standard CMOS 65/90nm technology node to fully profit from the cost/scalability economics reflected by Moore's law. This oscillator has the potential of bringing closer the vision of integrating flexible and agile low-cost radio capability into every silicon product of the intelligent environment of tomorrow's society.

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Coordinator

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW

Address

Kapeldreef 75
Leuven

Belgium

Administrative Contact

Liesbet LAGAE (Dr)

Participants (3)

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STMICROELECTRONICS SA

France

THE UNIVERSITY OF SHEFFIELD

United Kingdom

UNIVERSITE DE PARIS XI PARIS-SUD

France

Project information

Grant agreement ID: 016939

  • Start date

    1 June 2005

  • End date

    31 May 2008

Funded under:

FP6-NMP

  • Overall budget:

    € 2 971 619

  • EU contribution

    € 1 660 775

Coordinated by:

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW

Belgium